Room temperature electrical properties of Bi0.7Dy0.3FeO3 thin films deposited by PLD on ZnO films for potential applications

Bhatia, Deepak; Roy, Sandipta; Nawaz, S.; Meena, R. S.; Palkar, V. R.

doi:10.1016/j.mee.2016.06.003

Cited by 6 publications

(3 citation statements)

References 44 publications

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“…The SEM images reveal the BDFO coating with granular structure. More details on SEM images are reported in our earlier paper [29]. It indicates that the of BDFO film over ZnO film is polycrystalline in nature.…”

Section: Resultsmentioning

confidence: 80%

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Electrostatic force microscopy analysis of Bi0.7Dy0.3FeO3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications

Bhatia¹,

Roy²,

Nawaz³

et al. 2018

MoEM

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Citation: Bhatia D, Roy S, Nawaz S, Meena RS, Palkar VR (2018) Electrostatic force microscopy analysis of Bi 0.7 Dy 0.3 FeO 3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications. Modern Electronic Materials 4(2): 77-85. https://doi. AbstractIn this paper, we report the charge trapping phenomena in zinc oxide (n-ZnO) and Bi 0.7 Dy 0.3 FeO 3 (BDFO)/ZnO thin films deposited on p-type <100> conducting Si substrate. The significant change in contrast above the protrusions of ZnO verifies the possibility of heavy accumulation of injected holes in there. The ZnO and BDFO/ZnO films were characterized by the electrostatic force microscopy (EFM) to understand the phase dependence phenomenon on the bias supporting electron tunnelling. The EFM has an important role in the analysis of electrical transport mechanism characterization and electric charge distribution of local surface in nanoscale devices. It was observed that in BDFO/ ZnO, the contrast of EFM images remains constant with the bias switching and that primarily indicates availability of trap sites to host electrons. The change in contrast over the protrusions of ZnO suggests that mobility of the electrical charge carriers may be through the grain boundary. The formation of these hole-trapped sites may be assumed by bond breaking phenomenon.

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Section: Resultsmentioning

confidence: 80%

“…The movement of holes from Si to ZnO is restricted by the large difference between the valence-band offset and conduction-band offset. Thus, the current transport in the device is dominated by the flow of electrons from the n-ZnO to the p-Si [28][29][30][31].…”

Section: Methodsmentioning

confidence: 99%

Electrostatic force microscopy analysis of Bi0.7Dy0.3FeO3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications

Bhatia¹,

Roy²,

Nawaz³

et al. 2018

MoEM

Self Cite

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“…As seen from Figure c, ZnO nanowire arrays are uniformly distributed on the BLFO film. Moreover, the inset of Figure c demonstrates a hexagonal cross-section and columnar structure with average diameters of 190 nm, indicating the hexagonal wurtzite structure and highly c -axis orientation of ZnO nanowires. , Figure d gives the cross-section SEM image of the BLFO/ZnO heterojunction, from which the BLFO film of 270 nm thickness and the ZnO nanowires with length of 6 μm are unambiguously observed. It is worthwhile mentioning that the interface between BLFO film and ZnO nanowire arrays can be clearly identified from the inset in Figure d, which indicates each layer is well prepared and is of excellent crystallization.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Photovoltaic Performances of La-Doped Bismuth Ferrite/Zinc Oxide Heterojunction by Coupling Piezo-Phototronic Effect and Ferroelectricity

et al. 2020

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Ferroelectric materials have drawn widespread attention due to their switchable spontaneous polarization and anomalous photovoltaic effect. The coupling between ferroelectricity and the piezo-phototronic effect may lead to the design of distinctive photoelectric devices with multifunctional features. Here, we report an enhancement of the photovoltaic performances in the ferroelectric p-type La-doped bismuth ferrite film (BLFO)/n-type zinc oxide (ZnO) nanowire array heterojunction by rationally coupling the strain-induced piezoelectricity in ZnO nanowires and the ferroelectricity in BLFO. Under a compressive strain of −2.3% and a 10 V upward poling of the BLFO, the open-circuit voltage (V OC) and short-circuit current density (J SC) of the device increase by 8.4% and 54.7%, respectively. Meanwhile, the rise (/decay) time is modulated from 153.7 (/108.8) to 61.28 (/74.86) ms. Systematical band diagram analysis reveals that the promotion of photogenerated carriers and boost of the photovoltaic performances of the device can be attributed to the modulated carrier transport behaviors at the BLFO/ZnO interface and the superposed driving forces arising from the adding up of the piezoelectric potential and ferroelectric polarization. In addition, COMSOL simulation results of piezopotential distribution in ZnO nanowire arrays and the energy band structure change of the heterojunction further confirm the mechanisms. This work not only presents an approach to design high-performance ferroelectric photovoltaic devices but also further broadens the research scope of piezo-phototronics.

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Confirmation of spatial coexistence of magneto-electric coupling in Bi0.7Dy0.3FeO3 thin films integrated with Si/ZnO film for MEMS and memory applications

Bhatia

Sharma

Meena

et al. 2019

Journal of Materials Research and Technology

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Room temperature electrical properties of Bi0.7Dy0.3FeO3 thin films deposited by PLD on ZnO films for potential applications

Cited by 6 publications

References 44 publications

Electrostatic force microscopy analysis of Bi0.7Dy0.3FeO3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications

Electrostatic force microscopy analysis of Bi0.7Dy0.3FeO3 thin films prepared by pulsed laser deposition integrated with ZnO films for microelectromechanical systems and memory applications

Enhanced Photovoltaic Performances of La-Doped Bismuth Ferrite/Zinc Oxide Heterojunction by Coupling Piezo-Phototronic Effect and Ferroelectricity

Confirmation of spatial coexistence of magneto-electric coupling in Bi0.7Dy0.3FeO3 thin films integrated with Si/ZnO film for MEMS and memory applications

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