Confirmation of spatial coexistence of magneto-electric coupling in Bi0.7Dy0.3FeO3 thin films integrated with Si/ZnO film for MEMS and memory applications

Bhatia, Deepak; Sharma, Himanshu; Meena, R. S.; Palkar, V. R.

doi:10.1016/j.jmrt.2018.04.014

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2022

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“…As a commonly used UV photodiode, ZnO/p-type silicon (p-Si) is easily prepared and suitable for monolithic integration [10][11][12]. However, the low conductivity of pure ZnO could degrade the electrical and optical properties of ZnO/p-Si photodiodes.…”

Section: Introductionmentioning

confidence: 99%

Photoelectric characteristics of Al-doped ZnO/p-Si diode prepared by radio frequency magnetron sputtering

Lu¹,

Guo²,

Su³

et al. 2022

J. Phys. D: Appl. Phys.

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Al-doped ZnO (AZO) thin films were deposited on p-type silicon (p-Si) substrates by radio frequency magnetron sputtering technology. The crystal structure, morphology characterization and elemental analysis show that AZO film grows along the c-axis (002) orientation without other impurities. The current-voltage and current-time characteristics under different illumination conditions demonstrate that the Au/AZO/p-Si diode has typical rectification behavior, excellent stability and repeatability. The photocurrent is proportional to the intensity of ultraviolet irradiation, and the photocurrent reaches 110 μA at a bias voltage of 5 V under 11.75 mW/cm2 ultraviolet light irradiation. By calculating the conduction band and valence band offset values of AZO/p-Si heterojunction, the energy band diagrams at different bias states are constructed to explain the photoelectric response behavior. These results will be helpful for the design of high-performance photodiodes.

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Section: Introductionmentioning

confidence: 99%