Abstract:Al-doped ZnO (AZO) thin films were deposited on p-type silicon (p-Si) substrates by radio frequency magnetron sputtering technology. The crystal structure, morphology characterization and elemental analysis show that AZO film grows along the c-axis (002) orientation without other impurities. The current-voltage and current-time characteristics under different illumination conditions demonstrate that the Au/AZO/p-Si diode has typical rectification behavior, excellent stability and repeatability. The photocurren… Show more
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