Effect of Interface Trap States on Optical Barrier Height of NiSi/Si Infrared Detector

Roy, Sandipta; Duttagupta, S. P.; Ramakrishnan, D.

doi:10.1016/j.proeng.2016.07.346

Cited by 2 publications

(1 citation statement)

References 8 publications

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“…For Ni‐Si, the Si 2p3/2 peak occurs at 99.48 eV which corresponds to the pure Si peak. [ 33,34 ] The Si 2p spectra of the Ni‐rich silicides, Ni 3 Si, and Ni‐Si exhibited a shoulder peak located at ≈103.4 eV, suggesting the formation of SiO 2 . [ 7 ] The minor oxidation trend could be due to the thermal treatment of the sample.…”

Section: Resultsmentioning

confidence: 99%

Narrow Line Width Ni–Cu–Sn Front Contact Metallization Patterns for Low‐Cost High‐Efficiency Crystalline Silicon Solar Cells using Nano‐Imprint Lithography

et al. 2023

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An in‐house‐developed nanoimprint lithography system is designed and developed to demonstrate a commercially viable method for creating Ni–Cu–Sn‐based narrow linewidth finger patterns capable of effectively reducing shadow loss in the front contact metallization on industrial silicon solar cells. Finite element analysis simulation studies estimate that an optimal force of 138 MPa is required to generate damage‐free patterns during nanoimprinting process. The poly (methyl methacrylate) residual layer is removed using reactive ion etching, which enhances the adhesion strength of Ni–Cu–Sn metallization. A low ohmic contact layer at the Si/Ni interface develops after sintering at 420 °C and formation of NiSi layer is confirmed through X‐ray photoelectron spectroscopy analysis as a function of Ar+ ion etching time. An average cell efficiency of 18.10% is achieved for silicon solar cells with micropatterned Ni/Cu/Sn‐based narrow linewidth front contact grid design, which can exhibit ≈1% enhancement in cell efficiency compared to commercial Ag screen‐printed solar cells. The Ni/Cu/Sn‐based front contact metallization can improve the cell performance by ≈6% compared to the commercial Ag screen‐printed metallization by reducing shadow loss and thereby indicating its suitability toward deploying for cost‐effective industrial solar cell manufacturing.

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Section: Resultsmentioning

confidence: 99%

Narrow Line Width Ni–Cu–Sn Front Contact Metallization Patterns for Low‐Cost High‐Efficiency Crystalline Silicon Solar Cells using Nano‐Imprint Lithography

et al. 2023

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Trap dynamics of hot electrons in metal–insulator–metal plasmonic structures for ultra-fast optoelectronics

Goudarzi

Behpour

Sundararaman

et al. 2022

Journal of Applied Physics

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We have calculated the time constants of the electron dynamics in traps in a metal–insulator–metal (MIM) plasmonic structure. Because of electron relaxation in metal, the surface plasmon polaritons decays into hot electrons near the surface of the metal, which facilitates the trap of electrons in the interfacial layer of the dielectric. We have calculated the capture and emission times separately as the electron does not follow the same mechanisms with the capture process when it is emitted from a trap at the metal/oxide interface. We have developed a quasi-two-dimensional treatment that has been modified from a previously used semiconductor/oxide junction by using Bardeen’s function to calculate the capture time. Various parameters including trap’s distance from the interface, temperature, voltage bias, and spectral nature of the hot electrons’ energy distribution influence the interaction between a plasmonic hot electron and a neutral near-interface trap in the capture process. On the one hand, the emission time is independent of the capture time, and it is determined by the tunneling time to the metal depending on the temperature and the energy difference between the trap energy levels (ground and excited states). We have showed that a wide range of capture times from seconds to picoseconds is possible for an interfacial trap at the room temperature due to the spectral energy distribution of hot electrons and dependence of the capture process on the losses in metals. On the other hand, the temperature plays the dominant role in the emission time. For the trap with 250 meV energy difference between its levels, the emission time is in the range of picosecond at room temperature. Therefore, the MIM plasmonic device can respond to a wide range of ac voltage frequencies including the ultra-fast domain. These interesting findings are useful to understand the ac response of the MIM plasmonic devices with applications in integrated photonics and ultra-fast optoelectronics.

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Effect of Interface Trap States on Optical Barrier Height of NiSi/Si Infrared Detector

Cited by 2 publications

References 8 publications

Narrow Line Width Ni–Cu–Sn Front Contact Metallization Patterns for Low‐Cost High‐Efficiency Crystalline Silicon Solar Cells using Nano‐Imprint Lithography

Narrow Line Width Ni–Cu–Sn Front Contact Metallization Patterns for Low‐Cost High‐Efficiency Crystalline Silicon Solar Cells using Nano‐Imprint Lithography

Trap dynamics of hot electrons in metal–insulator–metal plasmonic structures for ultra-fast optoelectronics

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