Effect of the presence of an inversion layer in an MPN structure

Roy, Sandipta; Daw, A. N.

doi:10.1016/0038-1101(82)90050-8

Cited by 12 publications

(7 citation statements)

References 6 publications

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“…Theoretical background.--Modified barrier heights due to shallow surface doping have been examined theoretically in considerable detail (9,(18)(19)(20)(21)(22)(23)(24)(25)(26) since the early 1970's. Various levels of approximation of carrier effects have been considered, including (i) the depletion approximation (9,(19)(20)(21)(22)(23)(24)(25), (ii) a limited inversion approximation that accounted for minority free-carriers outside the p* region (26), and (iii) numerical calculations, including both electron and hole free-carriers throughout the device structure (present work). In addition to approximations for the free-carrier densities, the effects associated with nonplanar doping profiles in the shallow p" layer have been considered by a number of authors (19,23).…”

Section: Discussionmentioning

confidence: 99%

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Metal‐p+‐n Enhanced Schottky Barrier Structures on (100) InP

Schwartz

Gualtieri

Bonner

1986

J. Electrochem. Soc.

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An in vacuo, shallow Zn diffusion technique has been examined for increasing the effective Schottky barrier height of Ag and Au on (100) n-InP. For a single diffusion cycle, a barrier enhancement of -0.1 eV was achieved by forming a shallow (-400]t) p § layer with an acceptor-to-bulk-donor ratio NA/ND ~ 10. A multiple diffusion sequence yielded barrier enhancements of -0.2 eV for a p* layer width of -800]~ and NA/ND ~ 6-8. Numerical evaluation of Poisson's equation, including both electron and hole free-carrier densities, provides estimates of where the depletion approximation fails as a function of doping and width of the surface p* layer.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.192.114.19 Downloaded on 2015-06-26 to IP

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Section: Discussionmentioning

confidence: 99%

“…(This expression is written where the p*-n boundary occurs at x = t, rather than at x = 0 as in Ref. (26)). In the inversion formulation, one no longer has a simple analytical expression for the maximum Xm in the potential; rather, one has to solve two coupled equations to' obtain Xm.…”

Section: Depletion Approximation--lubberts Et Al (19) Solvedmentioning

confidence: 99%

Metal‐p+‐n Enhanced Schottky Barrier Structures on (100) InP

Schwartz

Gualtieri

Bonner

1986

J. Electrochem. Soc.

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“…Barrier Height of Au/p-InP/n-Ino. 5 By incorporating a very shallow p layer, the enhancement of the barrier height is evident. With a 300-A-thick p layer, the barrier height was increased to 0.42 eV.…”

Section: Resultsmentioning

confidence: 98%

Enhancement of Gold on n-InGaAs Schottky Barrier Height by Using a thin p-InP Layer

1994

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In this study, we demonstrate the enhancement of n-Ino. 5 3 Gao. 4 7 A s Schottky barrier height by using a thin (300-1800 A) p-InP surface layer. An increase in the barrier height of 0.46 eV, making the total barrier height 0.66 eV, was obtained in a Au/p-InP/n-InGaAs structure, resulting in a great reduction of leakage currents.Results of the electrical measurements are summarized in table 1.The barrier height of nIno. 53 Gao. 47 As was increased from 0.2 eV to 0.66 eV when a 1200-A-thick p-InP surface layer was employed.

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“…Although Sehottky barriers on most covalent semiconductors are relatively insensitive to changes in the metal workfunction, it has been known since the early 1970's that surface-doped barriers in either a metal-p+-n (MPN) or metalm*-p (MNP) configuration can be employed to enhance barrier heights. A number of theoretical papers have appeared treating both narrow (1)(2)(3)(4)(5)(6) and extended (7)(8)(9) surface-doped regions. With the exception of Ref.…”

mentioning

confidence: 99%

“…With the exception of Ref. (5), these papers have treated the surface-doped zone as fully depleted. For large barrier heights, minority carriers will collect in the vicinity of the potential hump and eventually affect saturation of the barrier height.…”

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confidence: 99%