Enhancement of Gold on n-InGaAs Schottky Barrier Height by Using a thin p-InP Layer

Abstract

In this study, we demonstrate the enhancement of n-Ino. 5 3 Gao. 4 7 A s Schottky barrier height by using a thin (300-1800 A) p-InP surface layer. An increase in the barrier height of 0.46 eV, making the total barrier height 0.66 eV, was obtained in a Au/p-InP/n-InGaAs structure, resulting in a great reduction of leakage currents.Results of the electrical measurements are summarized in table 1.The barrier height of nIno. 53 Gao. 47 As was increased from 0.2 eV to 0.66 eV when a 1200-A-thick p-InP surface layer was employed.

The physics and chemistry of the Schottky barrier height

“…In addition, the band bending within the ICL due to exposed dopants may become important in rendering the effective barrier height. [337][338][339][340][341] When the semiconductor interlayer is not in accumulation or strong inversion, the band diagrams for the entire MIS stack are the same as those depicted in Figs. 47(a)-47(c), with the understanding that the band gap for the ICL may be larger or smaller than that of the semiconductor and that the fixed charge assumed for the I-S interface is likely negligible.…”