Recent advances in Schottky barrier concepts

Tung, R. T.

doi:10.1016/s0927-796x(01)00037-7

Cited by 1,112 publications

(900 citation statements)

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“…The validity of Equation (1) is limited because of, e.g., effects of interface states (Bardeen limit [16,107] ), which we will, to a first approximation, ignore here. [13,14] Depending on the built-in potential, we distinguish between three cases: [16] accumulation (of majority carriers, C SC < 0, Fig. 3a), depletion (of majority carriers, (C SC þ j) < E G /2, Fig.…”

Section: Electrostatics Of Metal/semiconductor (Ms) Junctionmentioning

confidence: 99%

“…(1)), the same cannot be said about the critical role of interface dipoles that form upon bonding at any inorganic interface [13,14] and act to minimize C SC by Le Chatelier's principle (negative feedback). [13,14] We [3,64,109,110] and others [63,[111][112][113] have shown that adsorbing molecules with intrinsic dipoles and/or polar bonding to a solid can change the barrier height for transport in an MS/MIS junction. The theoretical potential drop, C I , can be calculated from: [114,115] .…”

Section: Dipolar Effects Of the Molecular Monolayermentioning

confidence: 99%

“…We term this change the bond dipole (we referred to bond dipoles above, when discussing direct metal/semiconductor interfaces [13,14] ). The bond dipole plays a major role at the SiÀC interface (see Section 4.1).…”

Section: Siàc Bond-dipolementioning

confidence: 99%

“…This sensitivity can be understood by recalling that the Schottky barrier inside the semiconductor is very sensitive to the interface dipole and to the morphology of the layer deposited on the semiconductor, as pointed out by Tung. [14,151] Actually, only defects that increase the current (exponentially, see Eq. (5)) should be cause for worry, because small areas with high barriers make a negligible contribution to the junction's overall J-V characteristics.…”

Section: Do We Measure Defects or Molecules?mentioning

confidence: 99%

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Molecules on Si: Electronics with Chemistry

et al. 2009

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Basic scientific interest in using a semiconducting electrode in molecule‐based electronics arises from the rich electrostatic landscape presented by semiconductor interfaces. Technological interest rests on the promise that combining existing semiconductor (primarily Si) electronics with (mostly organic) molecules will result in a whole that is larger than the sum of its parts. Such a hybrid approach appears presently particularly relevant for sensors and photovoltaics. Semiconductors, especially Si, present an important experimental test‐bed for assessing electronic transport behavior of molecules, because they allow varying the critical interface energetics without, to a first approximation, altering the interfacial chemistry. To investigate semiconductor‐molecule electronics we need reproducible, high‐yield preparations of samples that allow reliable and reproducible data collection. Only in that way can we explore how the molecule/electrode interfaces affect or even dictate charge transport, which may then provide a basis for models with predictive power.To consider these issues and questions we will, in this Progress Report, review junctions based on direct bonding of molecules to oxide‐free Si. describe the possible charge transport mechanisms across such interfaces and evaluate in how far they can be quantified. investigate to what extent imperfections in the monolayer are important for transport across the monolayer. revisit the concept of energy levels in such hybrid systems.

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Section: Electrostatics Of Metal/semiconductor (Ms) Junctionmentioning

confidence: 99%

Section: Dipolar Effects Of the Molecular Monolayermentioning

confidence: 99%

Section: Siàc Bond-dipolementioning

confidence: 99%

Section: Do We Measure Defects or Molecules?mentioning

confidence: 99%

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Molecules on Si: Electronics with Chemistry

et al. 2009

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“…In general, the experimentally observed Schottky barrier is modified due to the influence of image-force surface states of the semiconductor and/or the dipole effect (Tung, 2001;Kampen, 2006). Nevertheless, the ideal Schottky barrier height estimated from Eq.…”

Section: Transparent Conducting Polymers As Schottky Contactsmentioning

confidence: 99%