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In this study, we demonstrate the enhancement of n-Ino. 5 3 Gao. 4 7 A s Schottky barrier height by using a thin (300-1800 A) p-InP surface layer. An increase in the barrier height of 0.46 eV, making the total barrier height 0.66 eV, was obtained in a Au/p-InP/n-InGaAs structure, resulting in a great reduction of leakage currents.Results of the electrical measurements are summarized in table 1.The barrier height of nIno. 53 Gao. 47 As was increased from 0.2 eV to 0.66 eV when a 1200-A-thick p-InP surface layer was employed.

We have studied the deep levels in the lattice-matched InP/(InAlGa)As heterojunction system. Five p-n junction samples were grown by metalorganic chemical vapor deposition with varied Al composition of 0%, 16%, 36%, 45%, and 55%. A vacancy-related deep electron trap was found at the InP/(InAlGa)As interface. This trap has less concentration in the sample with higher Al composition, and is not observed when Al composition is greater than 55%. Its activation energy within the band gap increases with the increasing Al composition. The trap can be eliminated by rapid thermal annealing at 700 °C. Current-voltage characteristics show that this trap acts as recombination centers under forward bias condition.

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