Effect of Se-doping on deep impurities in AlxGa1−xAs grown by metalorganic chemical vapor deposition

Chen, J. C.; Huang, Zhongjie; Yang, Bing; Chen, H. K.; Yu, Tao; Lee, Kun-Jing

doi:10.1007/bf02676831

Cited by 5 publications

(1 citation statement)

References 18 publications

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“…DLTS measurements on AlGaAs samples with similar molar composition to the devices of this work have identified peaks that are ∼0.25 to ∼0.35 eV below the conduction-band edge, attributed to dopant-based DX centers. [59][60][61][62][63][64] These DX centers in AlGaAs may potentially contribute to the ∼0.34 eV noise peak in Fig. 9.…”

Section: Discussionmentioning

confidence: 98%

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Luo,

O'Hara,

et al. 2024

Journal of Applied Physics

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Current–voltage characteristics and low-frequency (LF) noise of industrial-quality AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistors are evaluated as a function of bias stress and temperature. A small positive shift of threshold voltage Vth and negligible degradation in peak transconductance GM are observed under ON-state bias conditions at elevated temperatures. The Vth measurements suggest activation of an acceptor-like defect or impurity center. The GM measurements demonstrate that newly activated defects are not located close enough to the two-dimensional electron gas to scatter carriers strongly. First-principles calculations and comparisons with previous work suggest that OAs impurity centers, other oxygen-related defects, isolated AsGa antisites, and dopant-based DX centers may contribute significantly to low-frequency (LF) noise in as-processed devices. LF noise is relatively unaffected by voltage stress at elevated temperatures, consistent with the small changes in Vth and peak GM.

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Section: Discussionmentioning

confidence: 98%

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Luo,

O'Hara,

et al. 2024

Journal of Applied Physics

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Deep hole traps in Be-doped Al0.2Ga0.8As layers grown by molecular beam epitaxy

Szatkowski¹,

Sierański²,

Płaczek‐Popko³

2003

Physica B: Condensed Matter

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Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs

Huang

Bray

Kuech

1996

Journal of Applied Physics

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Intentional oxygen incorporation, using diethyl aluminum ethoxide ͓(C 2 H 5 ͒ 2 AlOC 2 H 5 ͔ during metalorganic vapor phase epitaxy GaAs was found to compensate C and Zn shallow acceptors as well as Si and Se shallow donors, due to the oxygen-related multiple deep levels within the GaAs band gap. Deep level transient spectroscopy ͑DLTS͒ was used to characterize the energy levels associated with these oxygen deep centers. The total measured trap concentration from DLTS can account for the observed compensation in n-type GaAs:O. The total trap concentration in p-type GaAs:O, however, was found to be lower than the observed compensation by a factor of ϳ100. These oxygen deep centers exhibit multiple electronic states which have been associated with the local number of Al nearest neighbors and the microscopic structure of the defect. The concentration and nature of these deep levels were not influenced by the chemical identity of the shallow dopants.

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Effect of Se-doping on deep impurities in AlxGa1−xAs grown by metalorganic chemical vapor deposition

Cited by 5 publications

References 18 publications

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Deep hole traps in Be-doped Al0.2Ga0.8As layers grown by molecular beam epitaxy

Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs

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