Deep hole traps in Be-doped Al0.2Ga0.8As layers grown by molecular beam epitaxy

Szatkowski, J.; Sierański, K.; Płaczek‐Popko, E.

doi:10.1016/j.physb.2003.09.071

Cited by 3 publications

(5 citation statements)

References 5 publications

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“…The energy of trap H B3 (0.305 ± 0.006 eV) is comparable to the activation energy of trap H 3 (0.30 eV) [ 12 ], but H B3 found in this study shows an enhancement of the emission rate with the junction electric field. Therefore, it is difficult to confirm that this trap has the same nature.…”

Section: Resultssupporting

confidence: 81%

“…The nature of the traps before and after the emission can be summarised as C 0 → C - + C + , where C 0 is the charge state of the defect when it is filled, C - is defect charge state when it emits a hole, and C + is the carrier (hole in this case) that is emitted by the trap. Following this argument we are confident to confirm that hole traps found in this study H A1 , H A2 , H B1 , H B3 , H C1 , H C12 and H D1 are acceptor like traps [ 11 , 12 ].…”

Section: Resultssupporting

confidence: 76%

“…Traps H B5 and H D2 (0.430 ± 0.003 and 0.450 ± 0.004 eV) show about the same ground state activation energy as that of H 4 (0.46 eV) [ 11 ]. Another trap H C4 (0.554 ± 0.005 eV) has exactly the same activation energy as H 5 (0.55 eV) [ 12 ] with higher capture cross-section and concentration. It is identified as Cu-related trap in MBE grown p -type AlGaAs [ 12 ].…”

Section: Resultsmentioning

confidence: 99%

“…Another trap H C4 (0.554 ± 0.005 eV) has exactly the same activation energy as H 5 (0.55 eV) [ 12 ] with higher capture cross-section and concentration. It is identified as Cu-related trap in MBE grown p -type AlGaAs [ 12 ].…”

Section: Resultsmentioning

confidence: 99%

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Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

et al. 2011

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The growth of high mobility two-dimensional hole gases (2DHGs) using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100) GaAs substrate remained considerably lower than those obtained by growing on (311)A oriented surface using silicon as p-type dopant. In this study we will report on the properties of hole traps in a set of p-type Be-doped Al0.29Ga0.71As samples grown by molecular beam epitaxy on (100) and (311)A GaAs substrates using deep level transient spectroscopy (DLTS) technique. In addition, the effect of the level of Be-doping concentration on the hole deep traps is investigated. It was observed that with increasing the Be-doping concentration from 1 × 1016 to 1 × 1017 cm-3 the number of detected electrically active defects decreases for samples grown on (311)A substrate, whereas, it increases for (100) orientated samples. The DLTS measurements also reveal that the activation energies of traps detected in (311)A are lower than those in (100). From these findings it is expected that mobilities of 2DHGs in Be-doped GaAs-GaAlAs devices grown on (311)A should be higher than those on (100).

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Section: Resultssupporting

confidence: 81%

Section: Resultssupporting

confidence: 76%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

et al. 2011

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“…Having a doped emitter can lead to excess noise owing to traps formed by ionized clustering of impurities, 9 and this can reduce the gain of optoelectronic devices. This G-R noise has the general property that the noise spectral density increases at lower frequencies and so low-frequency noise (LFN) measurement can be utilized as a diagnostic tool to characterize devices 10 .…”

Section: Grown By Molecular Beam Epitaxy (Mbe)mentioning

confidence: 99%

Low-frequency noise properties of p-type GaAs/AlGaAs heterojunction detectors

Wolde

Lao

Pitigala

et al. 2016

Infrared Physics & Technology

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We have measured and analyzed, at different temperatures and bias voltages, the dark noise spectra of GaAs/AlGaAs heterojunction infrared photodetectors, where a highly doped GaAs emitter is sandwiched between two AlGaAs barriers. The noise and gain mechanisms associated with the carrier transport are investigated, and it is shown that a lower noise spectral density is observed for a device with a flat barrier, and thicker emitter. Despite the lower noise power spectral density of flat barrier device, comparison of the dark and photocurrent noise gain between flat and graded barrier samples confirmed that the escape probability of carriers (or detectivity) is enhanced by grading the barrier. The grading suppresses recombination owing to the higher momentum of carriers in the barrier. Optimizing the emitter thickness of the graded barrier to enhance the absorption efficiency, and increase the escape probability and lower the dark current, enhances the specific detectivity of devices.

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Probing the trap states in N–i–P Sb2(S,Se)3 solar cells by deep-level transient spectroscopy

Lian

Tang

et al. 2020

The Journal of Chemical Physics

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In this study, we provide fundamental understanding on defect properties of the Sb2(S,Se)3 absorber film and the impact on transmission of photo-excited carriers in N–i–P architecture solar cells by both deep level transient spectroscopy (DLTS) and optical deep level transient spectroscopy (ODLTS) characterizations. Through conductance–voltage and temperature-dependent current–voltage characterization under a dark condition, we find that the Sb2(S,Se)3 solar cell demonstrates good rectification and high temperature tolerance. The DLTS results indicates that there are two types of deep level hole traps H1 and H2 with active energy of 0.52 eV and 0.76 eV in the Sb2(S,Se)3 film, and this defect property is further verified by ODLTS. The two traps hinder the transmission of minority carrier (hole) and pinning the Fermi level, which plays a negative role in the improvement of open-circuit voltage for Sb2(S,Se)3 solar cells. This research suggests a critical direction toward the efficiency improvement of Sb2(S,Se)3 solar cells.

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Deep hole traps in Be-doped Al0.2Ga0.8As layers grown by molecular beam epitaxy

Cited by 3 publications

References 5 publications

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

Low-frequency noise properties of p-type GaAs/AlGaAs heterojunction detectors

Probing the trap states in N–i–P Sb2(S,Se)3 solar cells by deep-level transient spectroscopy

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