Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

Mari, Riaz Hussain; Shafi, Muhammad; Aziz, Mohsin; Khatab, A.; Taylor, David; Henini, M.

doi:10.1186/1556-276x-6-180

Cited by 10 publications

(7 citation statements)

References 15 publications

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“…Material quality issues such as the presence of traps in the fabricated structure could explain the poorer performance observed. The presence of traps in AlGaAs devices have been previously reported by other researchers35363738. Traps can cause polarisation effects that may contribute to the device function39: the charge generated by the X-ray radiation can be trapped, building up space charges in the detector, which collapses the electric field and results in device degradation.…”

Section: Methodssupporting

confidence: 60%

AlGaAs 55Fe X-ray radioisotope microbattery

Butera

Whitaker

Lioliou

et al. 2016

Sci Rep

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This paper describes the performance of a fabricated prototype Al0.2Ga0.8As 55Fe radioisotope microbattery photovoltaic cells over the temperature range −20 °C to 50 °C. Two 400 μm diameter p+-i-n+ (3 μm i-layer) Al0.2Ga0.8As mesa photodiodes were used as conversion devices in a novel X-ray microbattery prototype. The changes of the key microbattery parameters were analysed in response to temperature: the open circuit voltage, the maximum output power and the internal conversion efficiency decreased when the temperature was increased. At −20 °C, an open circuit voltage and a maximum output power of 0.2 V and 0.04 pW, respectively, were measured per photodiode. The best internal conversion efficiency achieved for the fabricated prototype was only 0.95% at −20 °C.

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Section: Methodssupporting

confidence: 60%

AlGaAs 55Fe X-ray radioisotope microbattery

Butera

Whitaker

Lioliou

et al. 2016

Sci Rep

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“…MBE growth of Be doped Al 0.2 Ga 0.8 As p layers is known to cause 0.4 eV and 0.46 eV traps within the temperature ranges of 200-225 K and 250-300 K, respectively. 27,28 Since the temperature range (253.15-313.15 K), at which the slope of À0.43 eV was measured, resides within the trap temperature region, it is likely that this is responsible. At sufficiently high temperatures, diffusion current will always dominate, 25 therefore Fig.…”

Section: B Current Measurementsmentioning

confidence: 99%

Temperature dependence of Al0.2Ga0.8As X-ray photodiodes for X-ray spectroscopy

Whitaker

Butera

Lioliou

et al. 2017

Journal of Applied Physics

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Two custom-made Al0.2Ga0.8As p+-i-n+ mesa X-ray photodiodes (200 μm diameter, 3 μm i layer) have been electrically characterised across the temperature range −20 °C to 60 °C. The devices were connected to a custom-made charge sensitive preamplifier to produce an AlGaAs photon-counting X-ray spectrometer. The devices' responses to illumination with soft X-rays from an 55Fe radioisotope X-ray source (Mn Kα = 5.9 keV; Mn Kβ = 6.49 keV) were investigated across the temperature range −20 °C to 20 °C. The best energy resolution (FWHM at 5.9 keV) achieved at 20 °C was 1.06 keV (with the detector at 10 V reverse bias). Improved FWHM was observed with the devices at temperatures of 0 °C (0.86 keV) and −20 °C (0.83 keV) with the photodiode reverse biased at 30 V. The average electron hole pair creation energy was experimentally measured and determined to be 4.43 eV ± 0.09 eV at 20 °C, 4.44 eV ± 0.10 eV at 0 °C, and 4.56 eV ± 0.10 eV at −20 °C.

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“…High-resolution Laplace (DLTS) technique is used to analyze the DLTS peaks, which were obtained from DLTS measurements. The emission rates of carriers are given by [41]:…”

Section: Deep Level Transient Spectroscopy Characteristics Of As-grown and Annealed Diodesmentioning

confidence: 99%

Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes

Alburaih¹,

Albalawi²,

Henini³

2019

Semicond. Sci. Technol.

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The effect of rapid thermal annealing on the electrical properties of p ++ GaP/p -GaAsPN/n + GaP diodes were investigated by using Current -Voltage (I-V), Capacitance-Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) techniques in the temperature range from 100K to 440K. It was observed that rapid thermal annealing treatment improves the electrical characteristics of as-grown structures. The annealed samples showed an ideality factor lower than the as-grown samples for all temperatures. The ideality factor values from I-V characteristics has changed between 6.8 and 1.9 in the temperature range of 110-430K for as grown diode, and between 6.3 and 1.44 in the temperature range 100-400K for the annealed diode. On the other hand, the barrier height increases and the ideality factor decreases with increasing temperature for all samples. The barrier height values has changed between 0.29 eV and 0.71eV in the temperature range of 190-430K for as grown diode, and between 0.38 eV and 0.77eV in the temperature range 180-420K for the annealed diode. High values of barrier heights were observed in the annealed samples due to the barrier height in-homogeneities at the p-i-n junction.The net acceptor concentration was calculated to be 1.18 x10 18 cm -3 and 2.11x10 18 cm -3 for the as-grown and annealed GaAsPN layers, respectively. The net acceptor concentration increases by ~56% and the leakage current of the GaAsPN/GaP p-i-n junction decreases by1-2 orders after RTA. DLTS and Laplace-DLTS measurements reveal three hole traps, H1an(0.06eV), H2an(0.065eV) and H3(0.23eV) in the annealed samples as compared with two hole traps, H4ag(0.07eV) and H5(0.25eV) in the as-grown samples. After rapid thermal annealing an extra shallow trap is created.

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Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100) and (311)A GaAs substrates by MBE

Cited by 10 publications

References 15 publications

AlGaAs 55Fe X-ray radioisotope microbattery

AlGaAs 55Fe X-ray radioisotope microbattery

Temperature dependence of Al0.2Ga0.8As X-ray photodiodes for X-ray spectroscopy

Effect of rapid thermal annealing on the electrical properties of dilute GaAsPN based diodes

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