“…The voltaic effect induced in semiconductors by the absorption of photons, α particles, and βparticles, which is the basic principle of operation of radioisotope microbatteries, has been investigated since the 1950s [8][9] [10]. Recent studies on wide bandgap semiconductor conversion devices for radioisotope microbatteries have been conducted, including GaAs [11] [12], Al0.2Ga0.8As [13], Al0.52In0.48P [14] [15], In0.5Ga0.5P [16], SiC [17] [18], GaN [19] and diamond [20]. However, a direct comparison of the performance of previously reported radioisotope microbatteries in order to inform future radioisotope microbattery design cannot be made; the geometry of the semiconductor conversion devices and the incident radiation power differed.…”