A truncated-inverted-pyramid (TIP) chip geometry provides substantial improvement in light extraction efficiency over conventional AlGaInP/GaP chips of the same active junction area (∼0.25 mm2). The TIP geometry decreases the mean photon path-length within the crystal, and thus reduces the effects of internal loss mechanisms. By combining this improved device geometry with high-efficiency multiwell active layers, record-level performance for visible-spectrum light-emitting diodes is achieved. Peak efficiencies exceeding 100 lm/W are demonstrated (100 mA dc, 300 K) for orange-emitting (λp∼610 nm) devices, with a peak luminous flux of 60 lumens (350 mA dc, 300 K). In the red wavelength regime (λp∼650 nm), peak external quantum efficiencies of 55% and 60.9% are measured under direct current and pulsed operation, respectively (100 mA, 300 K).
Strongly coupled and porous MoS2–CNT with leaves-and-branch structure shows a remarkably improved electrocatalytic activity towards hydrogen evolution reaction.
Pilot plant experimental data were collected to study the feasibility of H2S removal from air streams utilizing aqueous solutions. Solutions of NaOCl/NaOH were tested in a packed bed scrubber and found to be effective. An efficiency of 99.2% H2S removal was achieved at a gas flow rate of 790 lb/f2 ‐hr and liquid‐gas ratio of 5.06. Sodium hydroxide was found to be the active ingredient in the absorption process. A minimum alkalinity of pH 11 in the scrubbing solution was required for the H2S to be efficiently absorbed in the packed bed scrubber. For gas flow rates up to 2,100 lb/f2 hr, the height of a transfer unit (HTU) varied from 1.8 ft to 2 ft with different proportions of NaOCl and NaOH in the solution.
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