GaAs/Ge heterojunction grown by metal-organic chemical vapor deposition and its application to high efficiency photovoltaic devices

Chen, J. C.; Ristow, M.L.; Cubbage, J. I.; Werthen, J. G.

doi:10.1007/bf02660465

Cited by 21 publications

(10 citation statements)

References 6 publications

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“…31 On the other hand, growth at higher temperatures and low growth rates may result in the formation of an unwanted p-n junction due to simultaneous indiffusion of Ga and As into the Ge substrate, which in turn reduces the solar cell efficiency. 42 Chen et al 43 studied the effect of growth temperature on the surface morphology of GaAs epitaxial layers on 2°and 6°off-cut Ge ͑001͒ substrates. They pointed out that the surface morphology of the layers grown at higher temperature ͑730°C͒ was rough regardless of what the initial layer growth temperature was.…”

Section: A Cross-sectional Tem Observation Of the Gaasõge Heterointementioning

confidence: 99%

Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

Hudait

Krupanidhi

2001

Journal of Applied Physics

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The self-annihilation of antiphase boundaries ͑APBs͒ in GaAs epitaxial layers grown by low-pressure metal-organic vapor-phase epitaxy on Ge substrates is studied by several characterization techniques. Cross-sectional transmission electron microscopy shows that antiphase domain free GaAs growth on Ge was possible due to the proper selection of the growth parameters. The antiphase boundaries annihilate with each other after a thick 3 m layer of GaAs growth on a Ge substrate as observed by scanning electron microscopy studies. Double crystal x-ray diffraction data shows a slight compression of GaAs on Ge, and the full width at half maximum decreases with increasing growth temperatures. This confirms that the APBs annihilate inside the GaAs epitaxial films. Low temperature photoluminescence measurements confirm the self-annihilation of the APBs at low temperature growth and the generation of APBs at higher growth temperatures.

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Section: A Cross-sectional Tem Observation Of the Gaasõge Heterointementioning

confidence: 99%

Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

Hudait

Krupanidhi

2001

Journal of Applied Physics

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“…Smooth surface morphology is expected to be an indication of good material property and final device performance. 6 Due to the sub-Å sensitivity of SFM in measuring height changes, surface topographical features that are not easily observed using other techniques are readily revealed by SFM. In this paper, we study the surface morphology of GaAs films grown on offcut Ge substrates using a SFM and correlate our data with growth conditions and other characterization techniques, such as transmission electron microscope (TEM) and reflection high energy electron diffraction (RHEED).…”

Section: Introductionmentioning

confidence: 99%

Scanning force microscopy studies of GaAs films grown on offcut Ge substrates

Hsu

Ting

et al. 1998

J. Electron. Mater.

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“…Instead, peculiar dependencies associated with growth chamber design and substrate processing history are observed. [2][3][4][5] A survey of the literature reveals two major shortcomings that are largely responsible for this confusion. The first problem is that very little is known about surfaces in a metalorganic chemical-vapor deposition ͑MOCVD͒ environment.…”

Section: Introductionmentioning

confidence: 99%

Atomic-resolution study of steps and ridges on arsine-exposed vicinal Ge(100)

McMahon

Olson

1999

Phys. Rev. B

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Scanning tunneling microscope images of steps on AsH 3 -exposed vicinal Ge͑100͒ show very clearly that As/Ge steps reconstruct. A variety of As/Ge structures based on a ''double-row'' step reconstruction has been observed. We present and discuss some examples, and propose a structural model for a representative twolayer double-row As/Ge step. Under some conditions, we find that atomic-scale ridges are formed at the edges of terraces. These ridges are formed when arsine etching preferentially removes terrace atoms, leaving the steps intact. The resulting ridges are therefore simply the remnants of etch-resistant steps. An atomic-scale model for this process is proposed, and some consequences of ridge formation are discussed. ͓S0163-1829͑99͒06727-2͔

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GaAs/Ge heterojunction grown by metal-organic chemical vapor deposition and its application to high efficiency photovoltaic devices

Cited by 21 publications

References 6 publications

Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

Scanning force microscopy studies of GaAs films grown on offcut Ge substrates

Atomic-resolution study of steps and ridges on arsine-exposed vicinal Ge(100)

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