In this work the investigations of the morphology, structure and chemical composition of nanocrystalline SnS films grown by hot wall deposition method on glass substrates before and after high-density low-pressure inductively coupled argon plasma sputtering were performed using scanning electron microscopy, x-ray diffraction analysis, Raman spectroscopy, and energy-dispersive x-ray spectroscopy. The phenomenon of the surface smoothing for the SnS films with petal-like nanocrystallites during plasma treatment is described and the low sputtering rate for the studied films is discussed.
Cu 2 ZnSnSe 4 thin films are produced by selenizing electrochemically layer-by-layer deposited and preliminarily annealed Cu-Zn-Sn precursors. For flexible metal substrates, Mo and Ta foils are used. The morphology, elemental and phase compositions, and crystal structure of Cu 2 ZnSnSe 4 films are studied by scanning electron microscopy, X-ray spectral microanalysis, X-ray phase analysis, and Raman spectroscopy.
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