Tin sulfide thin films and Mo/p-SnS/n-CdS/ZnO heterojunctions for photovoltaic applications

Bashkirov, S. A.; Гременок, В. Ф.; Ivanov, V.A.; Lazenka, Vera; Bente, K.

doi:10.1016/j.tsf.2012.04.030

Cited by 69 publications

(25 citation statements)

References 18 publications

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“…). 1 There have been numerous reports on SnS-based thin film solar cells with various buffer layers, including SnS 2 , 2 CdO, 3 Cd 2 SnO 4 , 3 CdS, [4][5][6][7][8][9][10] Cd 1Àx Zn x S, 7 ZnO, 11,12 TiO 2 , 13 PbS, 14 and a-Si. 15 The prevalent low efficiencies can be attributed to various sources, such as bulk material impurities and defects, interface trap states, and notably unfavorable heterojunction band alignment.…”

mentioning

confidence: 99%

Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells

Sun

Haight²,

Sinsermsuksakul

et al. 2013

Appl. Phys. Lett.

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confidence: 99%

Band alignment of SnS/Zn(O,S) heterojunctions in SnS thin film solar cells

Sun

Haight²,

Sinsermsuksakul

et al. 2013

Appl. Phys. Lett.

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“…Reddy reported that highly efficient SnS-based solar cells should also have type I heterojunction structure which is similar to CIGS solar cell [11,17]. However, from the definition of type I and II heterojunctions, we found that the reported SnS-related solar cells using CdS buffer [19][20][21] are not type I heterojunction but belong to type II heterojunction which is shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 89%

“…Actually, several researchers have already fabricated SnS solar cells with various different buffer layers. They reported their SnS solar cells with different n-type buffer layers such as Zn(O,S) [15], ZnO [18], CdS, [19][20][21], Cd 1-x Zn x S [22], SnS 2 [23] and TiO 2 [24].…”

Section: Introductionmentioning

confidence: 99%

Effect of the thickness on the optoelectronic properties of SnS films and photovoltaic performance of SnS/i-a-Si/n-a-Si solar cells

2014

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Different thick orthorhombic SnS films were successfully fabricated by sulfurization of various sputtered different thick Sn precursor layers. All the absorption coefficients of different thick SnS films are higher than 2 9 10 4 cm -1 in the visible light region of 400-800 nm, and the direct band gaps of these SnS films were estimated to be about 1.2 eV. Furthermore, SnS/i-a-Si/n-a-Si solar cells with 205-, 420-, 635-, 845-and 1,060-nm-thick SnSabsorber layers were fabricated, and the 845-nm-thick SnSabsorber-based SnS/i-a-Si/n-a-Si solar cell shows the highest conversion efficiency of 0.42 %, a short-circuit current density of 2.4 mA/cm 2 , and an open-circuit voltage of 362 mV.

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“…Tin sulphide have been prepared using a variety of deposition techniques, such as spray pyrolysis [6,10,15,43], thermal evaporation [13,16,51,39], electronbeam evaporation [17], hot wall deposition [18], chemical bath deposition [19,55], successive ionic layer adsorption and reaction [20], RF sputtering [21], atomic layer deposition [22], chemical vapor deposition [23,45,46], electrochemical deposition [4,24,41,54] and sulphurization [25,26,55]. Among them, sulphurization is one of the simple method that can be used to prepare SnS films over large area deposition at low cost with well controlled composition and it has proved as a most promising method for producing high quality CIGS and CIS thin films for solar cell fabrication.…”

Section: Introductionmentioning

confidence: 99%