Influence of thermal treatment on the microstructure and electrical and optical properties of SnS thin films

Bashkirov, S. A.; Gladyshev, P. P.; Гременок, В. Ф.; Ivanov, V.A.

doi:10.1134/s1063783414070038

Cited by 4 publications

(9 citation statements)

References 26 publications

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“…The films were annealed for 1 h at 450°С in vacuum at 5 × 10 − 4 Pa. These conditions are also applied for the thermal treatment of SnS thin films [6].…”

Section: Methodsmentioning

confidence: 99%

“…Different methods for SnS thin film deposition have been developed including co-evaporation [8], sulfurization [26], electron beam evaporation [35], spray-pyrolysis [7], thermal vacuum evaporation [10], hot wall deposition [2][3][4][5][6]32,41]. The optical investigations showed that those SnS thin films energy band gap values change in a wide range from 1.07 to 1.7 eV, strongly depending on the microstructure including crystal structure defects, grain size, side phases, etc.…”

Section: Introductionmentioning

confidence: 99%

“…The optical investigations showed that those SnS thin films energy band gap values change in a wide range from 1.07 to 1.7 eV, strongly depending on the microstructure including crystal structure defects, grain size, side phases, etc. [2,3,[5][6][7][8]10,26,35,41]. Theoretical energy band structure calculations lead to the different values depending on the calculation method.…”

Section: Introductionmentioning

confidence: 99%

“…Recently we reported an effective control of the SnS thin film microstructure by thermal [6] and plasma [41] procedures. In this paper we present the study of thermal treatment influence onto the microstructure and optical properties of Pb x Sn (1 − x) S thin films with 0.05 b x b 0.20 obtained by a hot wall vacuum deposition method (HWVD).…”

Section: Introductionmentioning

confidence: 99%

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Influence of annealing on microstructure and optical properties of hot wall deposited PbxSn(1−x)S thin films

et al. 2016

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Pb x Sn (1 − x) S (0.05 b x b 0.20) thin films with the thickness of 2 μm were deposited on glass substrates using hot wall vacuum deposition method at the vacuum pressure of 5 × 10 −4 Pa, wall temperature of 600°С, substrate temperature of 300°С and subsequently annealed at 450°C in vacuum at 5 × 10 −4 Pa. The microstructure and optical properties of the as-deposited and annealed films were examined in relation to the film composition. The explanations of lattice parameter deviations from the bulk crystals for both as-deposited and annealed Pb x Sn (1 − x) S thin films are discussed. The Pb x Sn (1 − x) S thin films exhibit a preferred orientation around the [111] direction. The annealing decreases the film microstrain values and increases the grain size and the degree of preferred orientation. Thermal probe measurements showed the sulfur-deficient films to be p-type and the sulfur-rich films to be n-type. The Pb x Sn (1 − x) S films exhibit direct allowed transitions with energy band gap E g(d) increasing with the increase of Pb mole fraction. The E g(d) values for as-deposited films range from 0.95 to 0.98 eV and for annealed films they variy from 0.90 to 0.94 eV.

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“…The films were annealed for 1 h at 450°С in vacuum at 5 × 10 − 4 Pa. These conditions are also applied for the thermal treatment of SnS thin films [6].…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Influence of annealing on microstructure and optical properties of hot wall deposited PbxSn(1−x)S thin films

et al. 2016

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“…Such indistinct spectra rectification in {(Dhn) 2 } À {hn} and {(hn*Y(hn)) 2 } À {hn} specified coordinates near the red boundary in determination of band gap energy of the final CZTS semiconductor materials may be possible associated with the presence of a small amount of SnS impurity phase, what is confirmed by Raman spectroscopy. The band gap energy of cadmium sulfide varies between 1.07 and 1.27 eV depending on the thickness (amount of this phase) [14,15] and can contribute to the total band gap energy of CZTS thin films.…”

Section: The Study Of Optical Propertiesmentioning

confidence: 99%

The use of liquid-phase method from DMSO solutions for synthesis of CZTS thin film materials

et al. 2019

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The possibility of synthesis of CZTS thin films on glass substrates from DMSO precursor solutions containing various quantity of copper ions was investigated. The dependence of composition of final CZTS compounds obtained from precursor solutions with different copper ion concentration in DMSO was shown. It was obtained that with the introduction of a low additive of copper ion concentration one can synthesize CZTS thin films with kesterite structure as well as with secondary phases (tin sulfides of SnS, Sn2S3). The increase of the concentration of copper ions in DMSO precursor solution promotes the formation of CZTS thin films with kesterite phase and the minimum content of impurities.

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Eco-friendly and non-toxic thin film solar cell employing spray pyrolysed p-CZTS and n-SnS:Cu—a novel approach

Ninan

Menon

Geethu

et al. 2018

J Mater Sci: Mater Electron

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Influence of thermal treatment on the microstructure and electrical and optical properties of SnS thin films

Cited by 4 publications

References 26 publications

Influence of annealing on microstructure and optical properties of hot wall deposited PbxSn(1−x)S thin films

Influence of annealing on microstructure and optical properties of hot wall deposited PbxSn(1−x)S thin films

The use of liquid-phase method from DMSO solutions for synthesis of CZTS thin film materials

Eco-friendly and non-toxic thin film solar cell employing spray pyrolysed p-CZTS and n-SnS:Cu—a novel approach

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