Microstructure and electrical properties of SnS thin films

Bashkirov, S. A.; Gremenok, V. F.; Ivanov, V.A.; Shevtsova, V. V.

doi:10.1134/s1063783412120049

Cited by 17 publications

(10 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For the samples grown at high temperature, the major peak (111) was not observed, but the intensity of the peaks (040) and (080) strongly increased indicating a (010) preferred growth orientation. These results correspond well to the previously reported [2,3] consistent pattern for such films.…”

Section: Resultssupporting

confidence: 93%

“…SnS films with the stoichiometric composition of 3.0-5.5 μm thickness were grown on pre-cleaned Corning 7059 glass substrates using a hot wall epitaxy method [2,3]. It was carried out in a sealed quartz tube at the pressure of 5×10 −4 Pa and the temperature of the tube walls of 550 °C.…”

Section: Methodsmentioning

confidence: 99%

“…It is promising for thermoelectric devices [2], and its varied direct gap of 1.07-1.27 eV [3] laying in the optimum range for solar photoconversion makes SnS extremely promising for the application as an absorption layer in a new generation of photovoltaic devices. Among the many methods of SnS films growth, the highly effective approach is a hot wall thermal evaporation that allows fabrication of SnS films with the stoichiometric composition under conditions close to the thermodynamic equilibrium [2,3].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Nanoscale Surface Modification of Polycrystalline Tin Sulphide Films During Plasma Treatment

Zimin¹,

Горлачев²,

Dubov³

et al. 2013

Physics, Chemistry and Applications of Nanostructures

Self Cite

View full text Add to dashboard Cite

In this paper, we present a comparative research of the nanoscale modification of the surface morphology of polycrystalline SnS films on glass substrates with two different preferred growth orientations processed in inductively coupled argon plasma. We report a new effect of polycrystalline SnS film surface smoothing during plasma treatment, which can be advantageous for the fabrication of multilayer solar cell devices with SnS absorption layers.

show abstract

Section: Resultssupporting

confidence: 93%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Nanoscale Surface Modification of Polycrystalline Tin Sulphide Films During Plasma Treatment

Zimin¹,

Горлачев²,

Dubov³

et al. 2013

Physics, Chemistry and Applications of Nanostructures

Self Cite

View full text Add to dashboard Cite

show abstract

“…Different methods for SnS thin film deposition have been developed including co-evaporation [8], sulfurization [26], electron beam evaporation [35], spray-pyrolysis [7], thermal vacuum evaporation [10], hot wall deposition [2][3][4][5][6]32,41]. The optical investigations showed that those SnS thin films energy band gap values change in a wide range from 1.07 to 1.7 eV, strongly depending on the microstructure including crystal structure defects, grain size, side phases, etc.…”

Section: Introductionmentioning

confidence: 99%

“…The optical investigations showed that those SnS thin films energy band gap values change in a wide range from 1.07 to 1.7 eV, strongly depending on the microstructure including crystal structure defects, grain size, side phases, etc. [2,3,[5][6][7][8]10,26,35,41]. Theoretical energy band structure calculations lead to the different values depending on the calculation method.…”

Section: Introductionmentioning

confidence: 99%

Influence of annealing on microstructure and optical properties of hot wall deposited PbxSn(1−x)S thin films

et al. 2016

View full text Add to dashboard Cite

Pb x Sn (1 − x) S (0.05 b x b 0.20) thin films with the thickness of 2 μm were deposited on glass substrates using hot wall vacuum deposition method at the vacuum pressure of 5 × 10 −4 Pa, wall temperature of 600°С, substrate temperature of 300°С and subsequently annealed at 450°C in vacuum at 5 × 10 −4 Pa. The microstructure and optical properties of the as-deposited and annealed films were examined in relation to the film composition. The explanations of lattice parameter deviations from the bulk crystals for both as-deposited and annealed Pb x Sn (1 − x) S thin films are discussed. The Pb x Sn (1 − x) S thin films exhibit a preferred orientation around the [111] direction. The annealing decreases the film microstrain values and increases the grain size and the degree of preferred orientation. Thermal probe measurements showed the sulfur-deficient films to be p-type and the sulfur-rich films to be n-type. The Pb x Sn (1 − x) S films exhibit direct allowed transitions with energy band gap E g(d) increasing with the increase of Pb mole fraction. The E g(d) values for as-deposited films range from 0.95 to 0.98 eV and for annealed films they variy from 0.90 to 0.94 eV.

show abstract

The Electronic Structures of SnS, SnS2, and Sn2S3 for Use in PV

Whittles

2018

Electronic Characterisation of Earth‐Abundant Sulphides for Solar Photovoltaics

View full text Add to dashboard Cite

Microstructure and electrical properties of SnS thin films

Cited by 17 publications

References 22 publications

Nanoscale Surface Modification of Polycrystalline Tin Sulphide Films During Plasma Treatment

Nanoscale Surface Modification of Polycrystalline Tin Sulphide Films During Plasma Treatment

Influence of annealing on microstructure and optical properties of hot wall deposited PbxSn(1−x)S thin films

The Electronic Structures of SnS, SnS2, and Sn2S3 for Use in PV

Contact Info

Product

Resources

About