Photosensitive thin-film In/p-Pb x Sn1 − x S Schottky barriers: Fabrication and properties

Magnetron sputtered Cu doped SnS thin films for improved photoelectrochemical and heterojunction solar cells

“…This reveals that Cu:SnS only , where E g was increased from 1.22 eV to 1.32 eV by Pb doping. 15 Moreover, a similar shi in E g was observed from 1.34 eV to 1.43 eV by Ag doping in an SnS material. 11 The ab initio study, to the contrary, suggests that the indirect E g should 4.…”

Physical and electrical properties’ evaluation of SnS:Cu thin films

“…Theoretical studies showed the material could achieve power conversion efficiency >25% [3,18], but experimental results showed somewhat lower practical efficiency for SnS-based solar cells [1]. However, Cu dopants can be incorporated into SnS to increase optical and electrical properties and achieve high efficiency [19][20][21][22].…”

Charge-Transfer Processes in (SnS)1 – x(PrS)x Alloys

“…A systematic study of the application potential of various inorganic compounds in photoelectric solar converters showed that many sulfides are characterized by an optical energy gap width that is acceptable for photovoltaic devices [6]. For instance, tin sulfide has the forbidden gap width for direct transitions ≈ 1.3 eV [7], which is close to the optimum theoretical estimate for the effective conversion of solar energy into electric one using unijunction solar cells [8]. By applying SnS as an absorbing layer in photo-electric solar converters, an efficiency of up to 24% can be achieved theoretically [9], which is comparable with the results achieved nowadays with siliconbased and other elements.…”