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Analytical expressions are found for the mobility of a degenerate electron gas in a quantum wire for three scattering mechanisms: on ionized impurities and on piezoacoustic and deformation acoustic phonons. The expressions allow one to analyze the concentration, temperature, and dimensional dependences of the electron mobility.

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In the given paper, the temperature dependences ([Formula: see text]–300 K) of the green band intensity at wavelengths [Formula: see text] nm and [Formula: see text] nm have been measured and observed, respectively, from the polished and unpolished surface (PS and unPS) of a polycrystalline CVD (chemical vapor deposition) ZnSe sample upon excitation by X-ray quanta ([Formula: see text]. In both cases, the activation energy of thermal quenching has been determined, and the reasons for thermal quenching have been considered in detail. Along with XRL spectra analysis, the temperature behavior of the green band observed upon excitation by an ultraviolet (UV) laser (He–Cd, [Formula: see text] nm) from the PS and unPS in the temperature range [Formula: see text]–200 K has been discussed in more detail.

The photoluminescence spectra of CVD (chemical vapour deposition) ZnSe polycrystalline grown with a large excess of selenium and containing \O*Se-Cu+i\ complexes at stacking faults are studied. Absorbance was measured to complement these data. The features of the PL spectra in comparison with cathodoluminescence are considered. It is shown that PL bands identical to CL are observed as somewhat shorter wavelengths. For the studied crystals, a band model is presented according to the data obtained in this work. The low-energy shift of the PL spectra with decreasing excitation energy corresponds to a shift on the energy scale of the band model with a corresponding change in the type of radiative transitions. It is shown that identical photoluminescence bands are observed as somewhat shorter wavelengths than cathodoluminescence bands. For the crystals under study, a band model is presented according to the data obtained in the given decreasing work. The low-energy shift of the photoluminescence spectra upon the excitation energy corresponds to a shift along the energy scale of the band model with a corresponding change in the type of radiative transitions. Changes have been introduced that characterize the nature of the group of equidistant bands 477-490 nm, which are characteristic of ZnSe samples with an excess of oxygen and Se. The results can be useful for a more complete study of the structure of multiphonon exciton spectra of photo and cathodoluminescence of AIIBVI crystals. Keywords: band model, narrow-line multi-photon spectra, exciton radiation, stacking faults, isoelectronic oxygen impurity, carrying effective negative charge.