Physical properties of SnS thin films fabricated by hot wall deposition

Bashkirov, S. A.; Gremenok, V. F.; Ivanov, V.A.

doi:10.1134/s1063782611060030

Cited by 32 publications

(23 citation statements)

References 19 publications

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“…The literature reports obtaining SnS thin films with thickness 35 nm [4], however, to detect the size effect in the phonon spectra of SnS, according to our estimation, a thickness of no more than 4 nm is required, which corresponds to an eight-layer nanocrystal. Copyright of Canadian Journal of Physics is the property of Canadian Science Publishing and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission.…”

Section: Resultsmentioning

confidence: 94%

The long-wavelength lattice vibrations of nanocrystal SnS

et al. 2014

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The frequencies of the long-wavelength lattice vibrations of SnS crystal with a layered crystal structure have been calculated in the linear chain framework. It has been shown that these frequencies fall as the size of the crystal across layers decreases. A significant softening of the low-frequency Raman-active modes has been established as the thickness of a crystal is reduced to two layers.Résumé : Dans le cadre d'un formalisme de chaine linéaire, nous calculons les fréquences des vibrations de grande longueur d'onde d'un cristal de SnS avec structure lamellaire. Nous montrons que ces fréquences diminuent lorsque la distance entre les couches cristallines décroit. Nous observons un ramollissement des modes Raman actifs de basse fréquence, lorsque l'épaisseur du cristal est réduite à deux couches. [Traduit par la Rédaction]

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Section: Resultsmentioning

confidence: 94%

The long-wavelength lattice vibrations of nanocrystal SnS

et al. 2014

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“…SnS films with the stoichiometric composition of 3.0-5.5 μm thickness were grown on pre-cleaned Corning 7059 glass substrates using a hot wall epitaxy method [2,3]. It was carried out in a sealed quartz tube at the pressure of 5×10 −4 Pa and the temperature of the tube walls of 550 °C.…”

Section: Methodsmentioning

confidence: 99%

“…It is promising for thermoelectric devices [2], and its varied direct gap of 1.07-1.27 eV [3] laying in the optimum range for solar photoconversion makes SnS extremely promising for the application as an absorption layer in a new generation of photovoltaic devices. Among the many methods of SnS films growth, the highly effective approach is a hot wall thermal evaporation that allows fabrication of SnS films with the stoichiometric composition under conditions close to the thermodynamic equilibrium [2,3].…”

Section: Introductionmentioning

confidence: 99%

Nanoscale Surface Modification of Polycrystalline Tin Sulphide Films During Plasma Treatment

Zimin¹,

Горлачев²,

Dubov³

et al. 2013

Physics, Chemistry and Applications of Nanostructures

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In this paper, we present a comparative research of the nanoscale modification of the surface morphology of polycrystalline SnS films on glass substrates with two different preferred growth orientations processed in inductively coupled argon plasma. We report a new effect of polycrystalline SnS film surface smoothing during plasma treatment, which can be advantageous for the fabrication of multilayer solar cell devices with SnS absorption layers.

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“…Проведенное исследование показало, что предложенная модель роста пленок SnS при гидрохимическом осаждении хорошо согласу-ется с экспериментами и доказывает сложный агрегативный механизм фор-мирования твердой фазы из пересыщенного водного раствора. 4 -10 5 см -1 , и оптической ширине за-прещенной зоны, равной 1,1-1,5 эВ [1], используется в качестве поглоща-ющего слоя в тонкопленочных прео-бразователях солнечной энергии [1], а также в качестве фотопроводников, полупроводниковых датчиков, микро-батарей.…”

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