Microstructure and Raman Scattering of Cu2ZnSnSe4 Thin Films Deposited onto Flexible Metal Substrates

Станчик, А. В.; Гременок, В. Ф.; Bashkirov, S. A.; Тиванов, М. С.; Juškėnas, Remigijus; Новиков, Г. Ф.; Giraitis, Raimondas; Saad, A.

doi:10.1134/s1063782618020197

Cited by 8 publications

(6 citation statements)

References 34 publications

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“…Initially, a Cu-Zn-Sn (CZT) precursor is deposited on flexible Mo foil through co-electrodeposition, without sputtering a preliminary Mo layer. Other works reporting precursors deposition on unmodified Mo substrates are available in the literature [33,34]. The present work, however, presents important elements of innovation and uniqueness.…”

Section: Introductionmentioning

confidence: 93%

“…The most important is the approach followed for the deposition step, in which a single alkaline electrolyte is employed to directly deposit CZT. Kalinauskas et al [33] and Stanchik et al [34], on the contrary, report CZTS fabrication starting from multilayer precursors of the kind CuSn/Zn or Cu/Zn/Sn, all deposited from acidic electrolytes. Moreover, Stanchik et al report CZTSe rather than CZTS fabrication.…”

Section: Introductionmentioning

confidence: 99%

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CZTS thin film solar cells on flexible Molybdenum foil by electrodeposition-annealing route

et al. 2020

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Earth-abundant and non-toxic Kesterite-based Cu2ZnSnS4 (CZTS) thin film solar cells are successfully fabricated on flexible Molybdenum (Mo) foil substrates by an electrodeposition-annealing route. A well-adherent, densely packed, homogeneous, compact, and mirror-like CZT precursor is initially produced through electrodeposition by using a rotating working electrode. Subsequently, the co-electrodeposited CuZnSn (CZT) precursor is sulfurized in quartz tube furnace at 550 °C for 2 h in N2 atmosphere with the presence of elemental sulfur in order to form CZTS. Different characterization techniques like XRD, SEM, HR-TEM, Raman, and Photoluminescence demonstrate that almost phase-pure CZTS formed after sulfurization. A flexible Al/Al-ZnO/i-ZnO/CdS/CZTS/Mo foil solar cell is produced, where CdS is deposited by chemical bath deposition and transparent conducting oxide (TCO) is deposited by DC sputtering. The CZTS solar device shows a 0.55% power conversion efficiency on flexible Mo foil substrate and it constitutes the first prototype of this kind of solar cell produced by electrodeposition-annealing route without any surface modification of the Mo substrate. Graphic abstract

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Section: Introductionmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

CZTS thin film solar cells on flexible Molybdenum foil by electrodeposition-annealing route

et al. 2020

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“…In this case, the heterojunction can be associated with highly strained defects and a complex interface [8]. The X-ray diffraction pattern of the ZnSe film contains intense peaks (111), (220), (311), and (400) [9]. A compressed tablet of ZnSe nanoparticles with dimensions of ~ 35 nm according to the Scherer formula and ~ 50 nm according to scanning electron microscopy had photoconductivity at 301 -371 K [10].…”

Section: Introductionmentioning

confidence: 99%

Photoconductivity of gamma-irradiated Znse (Te)/ZnO:O and ZnSe(Te)/ZnO:O,Zn nanogeterojuctions

et al. 2023

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Possibility of enhancing the photoconductivity of ZnSe (0.2%Те)/ZnO:O nanoheterojunction was investigated under effect of thermo-treatment in zinc vapor followed by 60Сo gamma-irradiation in air to the dose of 106 Gy by means of generation of impurity-defect complexes. The obtained ZnSe (0.2%Te)/ZnO:O,Zn nanoheterojunction had an electron conductivity with the activation energy 0.33 eV that is caused by thermo-stimulated transfer of charge carriers on the stable resonance level Γ6v= 5.76 eV in the conducting band. The significant photoconductivity growth from 10-10 to 10-5 Ω-1 was achieved at 300 K, and also a broad band (480-1100 nm) light scattering at free carriers occurred due to formation of additional stable associates (OSe0TeSe0VZn-), (OSe0VZn-)- or (OSe0VZnMeZnIIIZni) at the interface between the matrix crystal p-ZnSe(0.2%Te):O,Zn and nanocrystallite n-ZnO of 40 nm size, where amorphous phase layer of 1.2 nm was also grown.

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“…At the same time, theoretical efficiency of the CZTSe solar cells is about 30% (Shockley and Queisser, 1961). In addition, Ti (Kaigawa et al, 2015) and Ta foils (Stanchik et al, 2019;Stanchik et al, 2018) were also used as substrates for the CZTSe thin films.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of Raman scattering in the Cu2ZnSnSe4 thin films on a Ta foil substrate

et al. 2020

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The temperature dependence (in range from 24 to 290 K) of Raman spectroscopy of the Cu 2 ZnSnSe 4 (CZTSe) films with Zn-rich (series A) and Zn-poor (series B) composition obtained on a Ta foil is investigated. Analisys and approximation by the Lorentz function of the CZTSe Raman spectra suggests that the CZTSe most intense Raman peak consists of two modes (at 192/189 and 194/195 cm −1 ), which are slightly shifted from each other. In addition, the Raman peaks around 192 and 189 cm −1 lead to asymmetric broadening of dominant peaks at 194 and 195 cm −1 in Raman spectra of the CZTSe films series A and B, respectively. In the case of the Sn-rich CZTSe films, we attribute of Raman peak around 189 cm −1 to SnSe 2 compound. However in the case of the Snpoor CZTSe films, the observable shift is too high to assign confidently the 192 cm −1 band to a SnSe 2 compound, which was not detected by XRD analysis. We suppose that this mode is attributed to disordered kesterite structure. The temperature dependence Raman spectra for both series of the CZTSe films shows that a change temperature from 290 to 24 K leads to position shift and narrowing of the CZTSe Raman A-modes. The calculated temperature coefficients and anharmonic constants in Klemens model approximations for temperature dependence of shift position and FWHM of the CZTSe A-modes shown that four-phonon process has dominant contribution in damping process and as a consequence in Raman spectrum changes for two series of the CZTSe films.

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Microstructure and Raman Scattering of Cu2ZnSnSe4 Thin Films Deposited onto Flexible Metal Substrates

Cited by 8 publications

References 34 publications

CZTS thin film solar cells on flexible Molybdenum foil by electrodeposition-annealing route

CZTS thin film solar cells on flexible Molybdenum foil by electrodeposition-annealing route

Photoconductivity of gamma-irradiated Znse (Te)/ZnO:O and ZnSe(Te)/ZnO:O,Zn nanogeterojuctions

Temperature dependence of Raman scattering in the Cu2ZnSnSe4 thin films on a Ta foil substrate

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