No abstract

In this paper, we present a new technique for isolating the electrical behavior of an SO1 MOSFET's from the self-heating effect using an ac conductance method. This method reconstructs an I-V curve by integrating high frequency output conductance data. The heating effect is eliminated when the frequency is much higher than the inverse of the thermal time constant of the SO1 device. We present measurement results from SO1 MOSFET's that demonstrate that heating can indeed be significant in SO1 devices.

No abstract

No abstract

No abstract

We report a frequency-dependent output conductance of partially depleted SOI MOSFET's. For high-frequency analog applications, the output conductance is less than half and the dynamic range of V d is two times higher than the dc I I I-V V V characteristics would indicate. A simple physical model for the phenomenon that involves a phenomenological body charging capacitance and can fit data within 10% is presented.

No abstract

No abstract