In this paper, we present a new technique for isolating the electrical behavior of an SO1 MOSFET's from the self-heating effect using an ac conductance method. This method reconstructs an I-V curve by integrating high frequency output conductance data. The heating effect is eliminated when the frequency is much higher than the inverse of the thermal time constant of the SO1 device. We present measurement results from SO1 MOSFET's that demonstrate that heating can indeed be significant in SO1 devices.
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