AC output conductance of SOI MOSFETs and impact on analog applications

Abstract

We report a frequency-dependent output conductance of partially depleted SOI MOSFET's. For high-frequency analog applications, the output conductance is less than half and the dynamic range of V d is two times higher than the dc I I I-V V V characteristics would indicate. A simple physical model for the phenomenon that involves a phenomenological body charging capacitance and can fit data within 10% is presented.

Kink-free SOI analog circuit design with floating-body/NFD MOSFETs

“…2 for the floating-body/NFD device of Fig. 1; these results are consistent with measured data [3], [5]. Note that as frequency increases the window widens, and ultimately at about 1 GHz the kink is virtually gone.…”

“…Recently, NFD circuit design approaches to avoid the kink effect, i.e., high-frequency operation [3], [5], cascode configuration [3], [6], and linked bodies [7], [8] have been reported, but none has been demonstrated to be generally useful for analog and mixed-signal circuits. In this paper, we describe a novel design approach to ensure general kink-free operation of floating-body/NFD analog circuits, and demonstrate it in the design of an SOI 10-b current-steering digital-analog converter (DAC).…”

Traps induced Greens function based mathematical modeling for BaTiO3–SrTiO3 gate stack dual metal GAA MOSFET

“…Figure 9 shows the variation of output conductance of CASE-1, CASE-2 and CASE-3 with respect to the drain source voltage. Output conductance is a result of body charging and occurs due to DIBL and modulation of channel length [31] only. CASE-1 gives the best result.…”

Low frequency noise in SOI transistors (Invited Paper)

“…In case of AC, the RC filtered effect, due to bodyto-ground capacitance (C BB , which includes the body-to-source capacitance C BS and the body to substrate capacitance C BSub ) paralleled with body/source diode resistance ( ), results in the frequency dependence of the kink effect. The frequency dependence of small-signal body voltage can be expressed as [4] and (2) where I R is the reverse saturation current of S/B junction diode and source/body junction current, , is dominated by impact ionization current when the devices are biased above the DC kink. In addition, f kink , defined as is the 3dB frequency of the AC body voltage.…”

“…The output conductance is therefore given by (4) I R e V SB nV T 1 - . 1 shows the drain voltage dependence of the output conductance.…”