MOSFET saturation voltage

Tu, R.; Huang, Jian; Ko, P.K.; Hu, Chenming

doi:10.1016/0038-1101(94)90204-6

Cited by 8 publications

(3 citation statements)

References 3 publications

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“…A final method, illustrated in Fig. 3 is based on the output resistance [3], whereby the linear part is extrapolated to the V DS axis, yielding directly V DSAT . However, in order to match Eq.…”

Section: Resultsmentioning

confidence: 99%

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Critical Study of the Saturation Drain Voltage and the Multiplication Current in MOSFETs at Liquid Helium Temperature

Simoen

Claeys²

2001

31st European Solid-State Device Research Conference

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In this paper, several empirical methods for the extraction of the saturation drain voltage V DSAT of cryogenic MOSFETs, operating at liquid helium temperature (LHT) will be compared. Their advantages and drawbacks are discussed in detail. It is concluded that the most accurate results are obtained from the output resistance based method. The consequences of the V DSAT extraction on the multiplication current (I M ) and drain-current kink modeling, will be outlined. From an extensive study of I M for different processing splits, it is concluded that the critical field for velocity saturation at 4.2 K increases with gate overdrive voltage, due to the transverse field dependence of the effective mobility.

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Section: Resultsmentioning

confidence: 99%

“…It is shown that the method based on the output resistance (R out ) [3] yields the most reliable data. Finally, the impact of the V DSAT extraction on the multiplication current modeling will be discussed.…”

Section: Introductionmentioning

confidence: 99%

Critical Study of the Saturation Drain Voltage and the Multiplication Current in MOSFETs at Liquid Helium Temperature

Simoen

Claeys²

2001

31st European Solid-State Device Research Conference

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“…an expression for the saturation voltage well-known to BSIM users [10,11]. One of the main advantages of the model presented here is the way we arrive at the same expression for the saturation voltage as in the BSIM model without having to go into any detailed discussion of charge carrier velocity saturation.…”

Section: B Saturation Voltagementioning

confidence: 99%

A learning tool MOSFET model: A stepping-stone from the square-law model to BSIM4

Jeppson

2013

2013 23rd International Workshop on Power and Timing Modeling, Optimization and Simulation (PATMOS)

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Students often experience difficulties grasping the gap between simple square-law MOSFET models and advanced BSIM models with a large number of model parameters for modeling the many second-order short-channel effects (SCE). In this paper, a physics-based learning tool MOSFET model is presented with the aim of serving as a stepping-stone between these two models. The model is based on three model parameters in each of the two regions of strong inversion operation. The three-point model parameter extraction scheme is presented to support student learning and hands-on experience. The model is useful both for small-signal parameter calculations in the analog bias region and for calculation of large-signal currents during logic gate transients. Model accuracy is very good, a lot better than first expected, even if geometry variations have not yet been explored.

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Reliability Aspects of Cryogenic Silicon Technologies

Claeys

Simoen

2001

Low Temperature Electronics

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MOSFET saturation voltage

Cited by 8 publications

References 3 publications

Critical Study of the Saturation Drain Voltage and the Multiplication Current in MOSFETs at Liquid Helium Temperature

Critical Study of the Saturation Drain Voltage and the Multiplication Current in MOSFETs at Liquid Helium Temperature

A learning tool MOSFET model: A stepping-stone from the square-law model to BSIM4

Reliability Aspects of Cryogenic Silicon Technologies

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