Blends of reduced graphene oxide (RGO) and poly(3-hexylthiophene) (P3HT) are used as the active layer of field-effect transistors (FETs). By using sequential deposition of the two components, the density of RGO sheets can be tuned linearly, thereby modulating their contribution to the charge transport in the transistors, and the onset of charge percolation. The surface potential of RGO, P3HT and source-drain contacts is measured on the nanometric scale with Kelvin Probe Force Microscopy (KPFM), and correlated with the macroscopic performance of the FETs. KPFM is also used to monitor the potential decay along the channel in the working FETs.

Although the growth of graphene by chemical vapor deposition is a production technique that guarantees high crystallinity and superior electronic properties on large areas, it is still a challenge for manufacturers to efficiently scale up the production to the industrial scale. In this context, issues related to the purity and reproducibility of the graphene batches exist and need to be tackled. When graphene is grown in quartz furnaces, in particular, it is common to end up with samples contaminated by heterogeneous particles, which alter the growth mechanism and affect graphene’s properties. In this paper, we fully unveil the source of such contaminations and explain how they create during the growth process. We further propose a modification of the widely used quartz furnace configuration to fully suppress the sample contamination and obtain identical and clean graphene batches on large areas.

No abstract

The CUPID Collaboration is designing a tonne-scale, background-free detector to search for double beta decay with sufficient sensitivity to fully explore the parameter space corresponding to the inverted neutrino mass hierarchy scenario. One of the CUPID demonstrators, CUPID-Mo, has proved the potential of enriched Li$$_{2}$$ 2 $$^{100}$$ 100 MoO$$_4$$ 4 crystals as suitable detectors for neutrinoless double beta decay search. In this work, we characterised cubic crystals that, compared to the cylindrical crystals used by CUPID-Mo, are more appealing for the construction of tightly packed arrays. We measured an average energy resolution of ($$6.7\pm 0.6$$ 6.7 ± 0.6 ) keV FWHM in the region of interest, approaching the CUPID target of 5 keV FWHM. We assessed the identification of $$\alpha $$ α particles with and without a reflecting foil that enhances the scintillation light collection efficiency, proving that the baseline design of CUPID already ensures a complete suppression of this $$\alpha $$ α -induced background contribution. We also used the collected data to validate a Monte Carlo simulation modelling the light collection efficiency, which will enable further optimisations of the detector.

A scintillating bolometer based on a large cubic Li 2 100 MoO 4 crystal (45 mm side) and a Ge wafer (scintillation detector) has been operated in the CROSS cryogenic facility at the Canfranc underground laboratory in Spain. The dual-readout detector is a prototype of the technology that will be used in the next-generation 0 2 experiment CUPID. The measurements were performed at 18 and 12 mK temperature in a pulse tube dilution refrigerator. This setup utilizes the same technology as the CUORE cryostat that will host CUPID and so represents an accurate estimation of the expected performance. The Li 2 100 MoO 4 bolometer shows a high energy resolution of 6 keV FWHM at the 2615 keV line. The detection of scintillation light for each event triggered by the Li 2 100 MoO 4 bolometer allowed for a full separation (∼8) between () and events above 2 MeV. The Li 2 100 MoO 4 crystal also shows a high internal radiopurity with 228 Th and 226 Ra activities of less than 3 and 8 Bq/kg, respectively. Taking also into account the advantage of a more compact and massive detector array, which can be made of cubic-shaped crystals (compared to the cylindrical ones), this test demonstrates the great potential of cubic Li 2 100 MoO 4 scintillating bolometers for high-sensitivity searches for the 100 Mo 0 2 decay in CROSS and CUPID projects.

No abstract

We have studied the current–voltage (I–V) characteristics of p+ a-SiC:H/n c-Si heterojunction solar cells at different conditions. Under standard test conditions (300 K, 100 mW/cm2, AM1.5) these cells show normal I–V characteristics with a high fill factor (FF = 0.73) and a relatively high efficiency for their simple structure (η≈13%). However, below room temperature and at illumination levels above 10 mW/cm2 they exhibit an S-shaped I–V curve and a low fill factor. Simulation studies revealed that this effect is caused by the valence band discontinuity at the amorphous/crystalline interface which hinders at low temperatures the collection of photogenerated holes at the front contact. At low temperatures a high hole accumulation at the interface combined with extra trapping of holes inside the p+ a-SiC:H layer causes a shift of the depletion region, from the c-Si into the p+ a-SiC:H. This leads to an enhanced recombination inside the c-Si depletion region causing a significant current loss (S-shape). Tunnelling through the valence band spike can reduce these effects. For lower doped p a-SiC:H layers (E act>0.4 eV) this S-shape can even occur at room temperature.

Indium–tin–oxide (ITO) films deposited by sputtering and e-gun evaporation on both transparent (Corning glass) and opaque (c-Si, c-Si/SiO2) substrates and in c-Si/a-Si:H/ITO heterostructures have been analyzed by spectroscopic ellipsometry (SE) in the range 1.5–5.0 eV. Taking the SE advantage of being applicable to absorbent substrate, ellipsometry is used to determine the spectra of the refractive index and extinction coefficient of the ITO films. The effect of the substrate surface on the ITO optical properties is focused and discussed. To this aim, a parametrized equation combining the Drude model, which considers the free-carrier response at the infrared end, and a double Lorentzian oscillator, which takes into account the interband transition contribution at the UV end, is used to model the ITO optical properties in the useful UV–visible range, whatever the substrate and deposition technique. Ellipsometric analysis is corroborated by sheet resistance measurements.