Contamination-free graphene by chemical vapor deposition in quartz furnaces

Abstract

Although the growth of graphene by chemical vapor deposition is a production technique that guarantees high crystallinity and superior electronic properties on large areas, it is still a challenge for manufacturers to efficiently scale up the production to the industrial scale. In this context, issues related to the purity and reproducibility of the graphene batches exist and need to be tackled. When graphene is grown in quartz furnaces, in particular, it is common to end up with samples contaminated by heterogeneous particles, which alter the growth mechanism and affect graphene’s properties. In this paper, we fully unveil the source of such contaminations and explain how they create during the growth process. We further propose a modification of the widely used quartz furnace configuration to fully suppress the sample contamination and obtain identical and clean graphene batches on large areas.

Toxicological response of the model fungus Saccharomyces cerevisiae to different concentrations of commercial graphene nanoplatelets

“…Although the described analyses gave us good insights into the morphology and composition of this particular lot of commercial GN (ref: 806625; lot: MKBW5736V), none of these analytical techniques allowed the identification and quantification of trace elements 32 . However, since the presence of trace metal impurities in graphene derivatives, either contained in the graphite precursor or transferred by reactants used in the nanomaterial preparation, has been previously described [33][34][35][36][37][38] , a trace element analysis of GN was done by inductively coupled plasma mass spectrometry (ICP-MS) to fully characterize its composition. All metallic elements identified and their concentrations are displayed in Table 1.…”

Carbon Dots Dispersed on Graphene/SiO2/Si: A Morphological Study

“…Graphene is the archetypal two‐dimensional (2D) material attracting a constant interest because of its stability, combined with excellent electrical, mechanical, and optical properties . Among the graphene synthesis methods, the chemical vapor deposition (CVD) on metal foils is a promising technique to deliver large‐area films with controlled properties for many applications . Perhaps more than the growth process itself, the transfer of atom‐thick CVD‐Gr sheets from the growth substrate to the target substrate is a crucial aspect of the fabrication of any graphene‐based device.…”

The Role of Graphene‐Based Derivative as Interfacial Layer in Graphene/n‐Si Schottky Barrier Solar Cells

“…The heater is excited by a 3 kW (maximum power) radio frequency current source, which is modulated by the signal of a thermocouple buried inside the graphite susceptor. This configuration presents various advantages over classic CVD system as the reduction of the contamination connected to the quartz tube ageing, fast heating, and a precise control on the process start/end time. After the growth, cyclododecane was used to support the films during the transfer process: the Cu substrate was etched in ammonium persulphate and then the films were rinsed in DI water before they were transferred onto different target substrate for fabrication of the cells and for characterization.…”