Optical, structural and electrical properties of device-quality hydrogenated amorphous silicon-nitrogen films deposited by plasma-enhanced chemical vapour deposition

Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon

“…Then, for R < 7.7, the N-H band was hardly detectable. The Si−H stretching modes were observed near 2180cm -1 for the SiN coatings with R < 10, with peak position varying according to Si-content as described by Giorgis et al [49]. As the surface under the curve is proportional to the total bond density, these measurements support that the film density increases when the Si-content decreases, as reported in the literature [16,17].…”

The effect of composition on the bond structure and refractive index of silicon nitride deposited by HWCVD and PECVD

“…5 shows the refractive index at 632 nm, n 632 , of the present films versus the N/Si ratio, combined with data from literature [11,[21][22][23][24][25][26][27][28][29]. The understanding of the influence of the composition on the refractive index can be improved by using the Lorentz-Lorenz formula.…”

Bulk and surface passivation of silicon solar cells accomplished by silicon nitride deposited on industrial scale by microwave PECVD

“…The optical gap decreases with increasing silicon contents until finally an optical gap of 1Á8 eV for hydrogenated amorphous silicon is obtained. 54 The decrease of the optical gap is due to an increase of the Si-Si coordination number and this increase produces narrowing of the Si-Si and * bands. 53 Optical properties of SiN x :H layers grown on Cz-wafers were measured with spectroscopic ellipsometry (SE) and with a Filmetrics reflectometer.…”