A new two-dimensional self-consistent Monte Carlo simulator including multi sub-band transport in 2D electron gas is described and applied to thin-film SOI double gate MOSFETs. This approach takes into account both out of equilibrium transport and quantization effects. Our method allows us to significantly improve microscopic insight into the operation of deep sub-100 nm CMOS devices. We compare and analyse the results obtained with and without quantization effects for a 15 nm long DGMOS transistor.
Electron transport in Ge at various temperatures down to 20 mK has been investigated using particle Monte Carlo simulation taking into account ionized impurity and inelastic phonon scattering. The simulations account for the essential features of electron transport at cryogenic temperature: Ohmic regime, anisotropy of the drift velocity relative to the direction of the electric field, as well as a negative differential mobility phenomenon along the <111> field orientation. Experimental data for the electron velocities are reproduced with a satisfactory accuracy. Examples of electron position in the real space during the simulations are given and evidence separated clouds of electrons propagating along different directions depending on the valley they belong.
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