Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect

Nguyen, Vu Quoc Huy; Mazzamuto, Fulvio; Saint-Martin, Jérôme; Bournel, A.; Dollfus, P.

doi:10.1088/0957-4484/23/28/289502

Cited by 16 publications

(17 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Devices exhibiting a negative differential conductance (NDC) are also of strong interest for high-frequency applications. With different physical origins, this effect has been predicted in different kinds of graphene nanoribbon or nanomesh junctions [17]- [23], in graphene superlattices [24], in resonant tunneling diodes [25], [26], in FETs [27], and in tunnel FETs [28]. It has been even observed experimentally in a graphene FET as a consequence of ambipolar transport behavior [29].…”

Section: Introductionmentioning

confidence: 93%

“…Assuming the lateral width of the device to be much larger than the channel length, the y-direction can be considered through Bloch periodic boundary conditions [32], [33]. The lattice is split into elementary cells, and by Fourier transform of the operators in (1) (along the Oy-direction), the Hamiltonian (1) is rewritten in the form of decoupled quasi-1-D Hamiltonians for each k y value [23], [26]. The retarded Green's functions of these Hamiltonians are computed in the ballistic approximation.…”

Section: Simulated Device and Transport Modelmentioning

confidence: 99%

See 1 more Smart Citation

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

Alarcon

Nguyễn

Berrada

et al. 2013

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Abstract-We study theoretically the different transport behaviors and the electrical characteristics of a top-gated graphene field-effect transistor where boron nitride is used as the substrate and gate insulator material, which makes the ballistic transport realistic. Our simulation model is based on the Green's function approach to solving a tight-binding Hamiltonian for graphene, self-consistently coupled with Poisson's equation. The analysis emphasizes the effects of the chiral character of carriers in graphene in the different transport regimes including the Klein and band-to-band tunneling processes. In particular, the Klein tunneling is shown to have an important role on the onset of the current saturation which is analyzed in detail as a function of the device parameters. Additionally, we predict the possible emergence of negative differential conductance and investigate its dependence on the BN-induced bandgap, the temperature, and the gate insulator thickness. Short-channel effects are evaluated from the analysis of transfer characteristics as a function of gate length and gate insulator thickness. They manifest through the shift of the Dirac point and the appearance of current oscillations at short gate length.Index Terms-Dirac point, graphene field-effect transistor (GFET), negative differential conductance (NDC), short-channel effect.

show abstract

Section: Introductionmentioning

confidence: 93%

Section: Simulated Device and Transport Modelmentioning

confidence: 99%

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

Alarcon

Nguyễn

Berrada

et al. 2013

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…Hence, antidot barriers enable tight confinement as well as effective transport barriers. theoretical side, several studies support the usefulness of antidot structures for transport devices [20][21][22][23][24]. In Refs.…”

Section: Introductionmentioning

confidence: 93%

“…Moreover, in that work, the effects of increasing the number of antidots along the transport direction was systematically studied. Finally, it has been demonstrated that GALs in a pn-junction geometry may be utilized to realize negative differential conductance [24]. Hence, there is by now ample experimental and theoretical evidence for the usefulness of GALs in electronic transport devices.…”

Section: Introductionmentioning

confidence: 99%

Transport in graphene antidot barriers and tunneling devices

Pedersen

2012

Journal of Applied Physics

View full text Add to dashboard Cite

Periodic arrays of antidots, i.e. nanoscale perforations, in graphene enable tight confinement of carriers and efficient transport barriers. Such barriers evade the Klein tunneling mechanism by being of the mass rather than electrostatic type. While all graphene antidot lattices (GALs) may support directional barriers, we show, however, that a full transport gap exists only for certain orientations of the GAL. Moreover, we assess the applicability of gapped graphene and the Dirac continuum approach as simplified models of various antidot structures showing that, in particular, the former is an excellent approximation for transport in GALs supporting a bulk band gap. Finally, the transport properties of a GAL based resonant tunneling diode is analyzed indicating that such advanced graphene based devices may, indeed, be realized using GAL structures.

show abstract

“…All other simulation parameters are given in the figure captions. We assume the lateral width of the device to be much larger than the channel length, so that the y direction can be considered through Bloch periodic boundary conditions [9,10]. Now, we summarize the most important features of the transport model used to compute the current density.…”

Section: Device Transport Modelmentioning

confidence: 99%

Transport behaviors in graphene field effect transistors on boron nitride substrate

Alarcon

Nguyễn

Berrada

et al. 2012

2012 15th International Workshop on Computational Electronics

View full text Add to dashboard Cite

-We model the transport behavior of a top-gated graphene field-effect transistor where boron nitride is used as substrate and gate insulator material. Our simulation model is based on the non-equilibrium Green's function approach to solving a tight-binding Hamiltonian for graphene, selfconsistently coupled with Poisson's equation. The analysis emphasizes the effects of the chiral character of carriers in graphene in the different transport regimes including Klein and band-to-band tunneling processes. We predict the possible emergence of negative differential conductance and investigate its dependence on the temperature and the BN-induced bandgap. Short-channel effects are evaluated from the analysis of transfer characteristics as a function of gate length and gate insulator thickness. They manifest through the shift of the Dirac point and the appearance of current oscillations at short gate length.

show abstract

Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect

Abstract: The full text of the corrigendum is available in the pdf provided.

Cited by 16 publications

References 0 publications

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors

Transport in graphene antidot barriers and tunneling devices

Transport behaviors in graphene field effect transistors on boron nitride substrate

Contact Info

Product

Resources

About