Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells

Bournel, A.; Dollfus, P.; Cassan, Éric; Hesto, P.

doi:10.1063/1.1316771

Cited by 28 publications

(30 citation statements)

References 15 publications

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“…The semiclassical MC approach of electron transport has been extended to the analysis on the DP spin relaxation phenomena in Refs. [20][21][22][23]. In a recent short paper, 14 the DP spin relaxation process in ͑001͒ InAs QW system has been scrutinized based on such semiclassical MC approach, focusing on the difference between the spin relaxation processes observed in the time-resolved and spaceresolved analyses.…”

Section: Monte Carlo Approach Of Spin Transportmentioning

confidence: 99%

“…[20][21][22][23] In the present study, the orientation of spin polarization vector is described in ͓110͔, ͓110͔, and ͓001͔ coordinate systems and the corresponding vector components are represented by S + , S − , and S z , respectively. During the free flight motion of an electron, the evolution of spin polarization vector is described by Eq.…”

Section: ͑3͒mentioning

confidence: 99%

“…Within the semiclassical MC approach, the electron motion following classical trajectories is interrupted by the scattering events, yielding new direction and magnitude of electron momentum, and repeating this process on an electron ensemble provides the evolution of wave vector during multiple scattering events, which therefore enables the direct observation of the DP spin relaxation process. 14,[20][21][22][23] In this study, we focus on the DP process at 300 K for a ͑001͒ In 0.81 Ga 0. 19 As QW of 80 Å well width inserted between In 0.53 Ga 0.47 As subchannel and Al 0.48 In 0.52 As barrier layer, which is one of the most promising structures for realizing spin-FET as detailed in Ref.…”

Section: ͑3͒mentioning

confidence: 99%

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Datta-Das-type spin-field-effect transistor in the nonballistic regime

Ohno

Yoh

2008

Phys. Rev. B

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We analyzed the applicability of original Datta-Das proposal for spin-field-effect transistor ͑spin-FET͒ to nonballistic regime based on semiempirical Monte Carlo simulation for spin transport. It is demonstrated that the spin helix state in two-dimensional electron gas system is sufficiently robust against D'yakonov-Perel' spin relaxation to allow an operation of Datta-Das-type spin-FET in the nonballistic transport regime. It is also shown that the spin diffusion length of the spin helix state can be increased with an in-plane electrical field along the ͓110͔ direction. In marked contrast to early proposals for nonballistic spin-FETs, the "on" and "off" states are characterized by a 180°phase difference in the spin precession motions, which is highly advantageous in terms of device flexibility.

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Section: Monte Carlo Approach Of Spin Transportmentioning

confidence: 99%

Section: ͑3͒mentioning

confidence: 99%

Section: ͑3͒mentioning

confidence: 99%

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Datta-Das-type spin-field-effect transistor in the nonballistic regime

Ohno

Yoh

2008

Phys. Rev. B

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“…12,13,14,15,16 Measurements of the electronic T 1 involve circularly polarized pump-probe techniques to create and observe coherent spin populations in the lowest conduction subband. Electron spin decoherence has been shown to occur via the spin precession 17 of carriers with finite crystal momentum k in the effective k-dependent crystal magnetic field of an inversion-asymmetric material.…”

Section: Introductionmentioning

confidence: 99%

Intersubband spin-density excitations in quantum wells with Rashba spin splitting

Ullrich

Flatté

2002

Phys. Rev. B

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In inversion-asymmetric semiconductors, spin-orbit coupling induces a k-dependent spin splitting of valence and conduction bands, which is a well-known cause for spin decoherence in bulk and heterostructures. Manipulating nonequilibrium spin coherence in device applications thus requires understanding how valence and conduction band spin splitting affects carrier spin dynamics. This paper studies the relevance of this decoherence mechanism for collective intersubband spin-density excitations (SDEs) in quantum wells. A density-functional formalism for the linear spin-density matrix response is presented that describes SDEs in the conduction band of quantum wells with subbands that may be non-parabolic and spin-split due to bulk or structural inversion asymmetry (Rashba effect). As an example, we consider a 40 nm GaAs/Al0.3Ga0.7As quantum well, including Rashba spin splitting of the conduction subbands. We find a coupling and wavevector-dependent splitting of the longitudinal and transverse SDEs. However, decoherence of the SDEs is not determined by subband spin splitting, due to collective effects arising from dynamical exchange and correlation.

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“…The knowledge of all such spin surfaces allows one to predict the forbidden spin trajectories. In addition, in the Monte Carlo simulation of spintronics device performance the information on the spin surface allows one to fix correctly the initial and final magnetization vectors of individual electrons or holes in the spin precession of an ensemble of spins in the spin device [21,22].…”

Section: Discussionmentioning

confidence: 99%

Spin properties of Hg_1–xCd_x Te/CdTe quantum wells

Dargys¹

2008

Physica Status Solidi (b)

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IntroductionThe effect of the spin-orbit (SO) interaction on a free charge carrier spin in semiconductors is twofold. First of all, it reorders the band structure at the center of the Brillouin zone, a typical example being the valence band rearrangement in elementary and compound semiconductors and appearance of new, SO split-off band. Secondly, the SO interaction lifts off the spin-splitting in otherwise degenerate energy bands, for example of the doubly degenerate Kramers pairs, if a semiconductor lattice or QW does not possess the inversion symmetry. This is a typical situation found in A 3 B 5 and A 2 B 6 compounds. Usually the former effect is much stronger than that of the spin-splitting of Kramers pairs. Typical values of the spin-orbit split-off energy D lie in the range of 0.1-1 eV [1], while the degenerate band spin-splitting energies are of the order of 0.01 eV for room temperature free charge-carriers [2,3]. The rearrangement of the energy bands and appearance of D is also reflected in carrier spin properties too: the average spin magnitude of the free carrier begins to depend on spin direction and magnitude of the wave vector [4].In the inverted band semiconductors represented by HgTe the energy gap g E has a negative value. The branches of conduction band dispersion in these semiconductors are directed downwards and merge with the valence band continuum. The role of the conduction band is

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Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells

Abstract: Articles you may be interested inElectric field effects on electron mobility in n-AlGaAs/GaAs/AlGaAs single asymmetric quantum wells J.

Cited by 28 publications

References 15 publications

Datta-Das-type spin-field-effect transistor in the nonballistic regime

Datta-Das-type spin-field-effect transistor in the nonballistic regime

Intersubband spin-density excitations in quantum wells with Rashba spin splitting

Spin properties of Hg_1–xCd_x Te/CdTe quantum wells

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Monte Carlo study of spin relaxation in AlGaAs/GaAs quantum wells

Abstract: Articles you may be interested inElectric field effects on electron mobility in n-AlGaAs/GaAs/AlGaAs single asymmetric quantum wells J.

Cited by 28 publications

References 15 publications

Datta-Das-type spin-field-effect transistor in the nonballistic regime

Datta-Das-type spin-field-effect transistor in the nonballistic regime

Intersubband spin-density excitations in quantum wells with Rashba spin splitting

Spin properties of Hg1–xCdx Te/CdTe quantum wells

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Product

Resources

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Spin properties of Hg_1–xCd_x Te/CdTe quantum wells