Single Photon Avalanche Diode with Monte Carlo Simulations: PDE, Jitter and Quench Probability

Rideau, D.; Oussaiti, Y.; Grebot, Jeremy; Helleboid, Rémi; Lopez, A.; Mugny, Gabriel; Bourreau, E.; Golanski, Dominique; Mamdy, Bastien; Alause, H. Wehbe; Nicholson, Isobel; Pellegrini, Sara; Vlimant, C.E.; Agnew, Megan; Cazimajou, Thibauld; Pala, Marco; Saint-Martin, Jérôme; Dollfus, P.

doi:10.1109/sispad54002.2021.9592567

Cited by 7 publications

(8 citation statements)

References 8 publications

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“…Full band Monte Carlo solvers are well suited for breakdown probability and jitter calculations [1,2,3,4,5]. The in-House Monte Carlo Full band solver is based on [6,7] and [8] for the band structure.…”

Section: Full Band Monte Carlomentioning

confidence: 99%

“…More results of the PDE will be presented at the conference, coupling Monte Carlo BrP predictions to numerical optical absorption calculations. The distribution of the time taken by the carrier to reach the avalanche zone by drift-diffusion as well as the time required to establish the avalanche is related to the timing jitter [1,3]. This latter build-up (that also depends on the quench circuit itself) typically occurs within less than 100 ps.…”

Section: Full Band Monte Carlomentioning

confidence: 99%

“…SPADs, or Single-Photon Avalanche Diodes, play a crucial role in optoelectronics, particularly in medical imaging, camera ranging, and automotive laser imaging detection and ranging (LiDAR) applications. Industrial optimization of SPAD Figures Of Merit (FOMs) is essential to achieve optimal Breakdown Probability (BrP), Photon Detection Efficiency (PDE) [1], and timing statistic response to avalanche (jitter) without compromising SPAD quench probability [3] and power consumption associated with Charge Per Pulse (CPP). However, most of these FOMs are stochastic and strongly influenced by the surrounding quenching circuit.…”

Section: Introductionmentioning

confidence: 99%

“…Using advanced Monte Carlo solvers, we present predictions of the BrP and Jitter [1,3]. A more complete modeling view is obtained within a mixed mode approach, and we address the impact of the quench circuit on the avalanche timedependent dynamics.…”

Section: Introductionmentioning

confidence: 99%

“…A more complete modeling view is obtained within a mixed mode approach, and we address the impact of the quench circuit on the avalanche timedependent dynamics. This novel approach makes possible the prediction of the stochastic time taken by the carrier to reach the avalanche zone by drift-diffusion as well as the time required to establish the avalanche (that is related to the timing jitter [1,3]), but can also predict the avalanche quench probability that depends on the quench circuit itself. We show that when the dynamics of the moving node is faster than the carrier evacuation time within the avalanche junction, secondary avalanches can occur giving rise to longer recovery time, additional power consumption and eventually paralysis of the SPAD (sustained avalanche) Calculations consist of simulations of random carrier trajectories within the device followed by carrier multiplications by impact ionization in the high field region and the quench of the avalanche by the external circuit.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Multiscale SPAD modeling: from Monte Carlo to SPICE simulations

Rideau,

HELLEBOID,

mugny

et al. 2023

Advanced Photon Counting Techniques XVII

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We present a study of the main SPAD figures of merit using a multiscale approach, from Monte Carlo simulations to SPICE simulations. We explore novel stochastic approaches capable of predicting accurately experimental measurements such as the Breakdown Probability, and the jitter. Additionally, the SPAD avalanche dynamics that is a stochastic process, is discussed within a transient Monte Carlo simulation perspective. We also derived a VerilogA model, making possible the analysis of the stochastic responses of the SPAD, including the buildup of the avalanche but also its quench. This latter quench probability of these diodes once in avalanche, rarely discussed in literature, is related to the dynamics of the voltage change of the floating cathode node. If the cathode voltage recovery (after the debiasing due to the quench circuit) is quicker than the time needed for the carrier evacuation within the avalanche junction, small additional avalanches can occur.

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