2010
DOI: 10.1063/1.3520656
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Electron transport properties in high-purity Ge down to cryogenic temperatures

Abstract: Electron transport in Ge at various temperatures down to 20 mK has been investigated using particle Monte Carlo simulation taking into account ionized impurity and inelastic phonon scattering. The simulations account for the essential features of electron transport at cryogenic temperature: Ohmic regime, anisotropy of the drift velocity relative to the direction of the electric field, as well as a negative differential mobility phenomenon along the <111> field orientation. Experimental data for the electron ve… Show more

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Cited by 18 publications
(28 citation statements)
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“…The electron energy-momentum dispersion relationship is given by ( This chapter will proceed by describing hole propagation and scattering, electron propagation and scattering utilizing a Herring-Vogt transformation and finally electron-hole recombination. Higher order mass terms and scattering processes which occur at high electric fields are discussed elsewhere in the literature [44]. phonons [45,46] limits their speed to around the longitudinal phonon phase velocity v L .…”
Section: Charge Monte Carlomentioning
confidence: 99%
“…The electron energy-momentum dispersion relationship is given by ( This chapter will proceed by describing hole propagation and scattering, electron propagation and scattering utilizing a Herring-Vogt transformation and finally electron-hole recombination. Higher order mass terms and scattering processes which occur at high electric fields are discussed elsewhere in the literature [44]. phonons [45,46] limits their speed to around the longitudinal phonon phase velocity v L .…”
Section: Charge Monte Carlomentioning
confidence: 99%
“…Should carrier scattering be absent altogether, the electrons in all four energy valleys would propagate at an angle of ∼ 35 degrees to the [001] detector axis, and would then be collected by the d set of electrodes only. That such is not the case brings into light, a contrario, the importance of the scattering processes (intervalley transitions via phonon emission in the first place 4,8 ) in determining the form of the charge collection patterns. A comparison of the electron patterns in both devices shows furthermore that, in addition to lattice scattering, there is another process involved, effective at low collection fields and different by its effects from one device to the other.…”
Section: Charge Collection Patternsmentioning
confidence: 99%
“…On the other hand, the detector crystals differ by their impurity content, which strongly suggests an effect of impurity scattering, the more pronounced as the field is lower. 4 Another impurity-related effect is carrier trapping, as reflected in the h channel signal amplitudes. The latter channel measures the full collected charge, and thus registers the magnitude of the electron trapping effects, larger at low detector biases (V p < ~ 1V) in the doped compared to the ultrapure specimen (this applies to hole trapping as well).…”
Section: Charge Collection Patternsmentioning
confidence: 99%
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“…Measured data is from [107]. Comparison theoretical predictions are from [108,109,110]. Whether a detector is n-or p-type does not affect the DMC's charge propagation algorithms in its current iteration, which clearly represents a direction for future work.…”
mentioning
confidence: 99%