Effect of discrete impurities on electron transport in ultrashort MOSFET using 3D MC simulation

Many-particle Hamiltonian for open systems with full Coulomb interaction: Application to classical and quantum time-dependent simulations of nanoscale electron devices

“…Then, the error of the meanfield approximation is smaller than the technical error ͑i.e., mesh error͒ due to the finite size of the cells. The long-range Coulomb interaction is well captured with the mean-field approximation, while this approximation is really bad strategy to capture the short-range Coulomb interaction [28][29][30][31][32] ͑see Fig. 8 in the paper͒.…”

“…Looking at final expression ͑B7͒, rewritten here as W k ͑r ជ , t͒ = W mean ͑r ជ , t͒ − V͑r ជ , r ជ k ͓t͔͒, it seems that W k ͑r ជ , t͒ can be computed from a unique mean-field solution of the Poisson equation W mean ͑r ជ , t͒ when subtracting the appropriate two-particle potential V͑r ជ , r ជ k ͓t͔͒. In fact, this is the strategy used in several recent works [28][29][30][31][32] to improve the treatments of the short-range Coulomb interaction in electron device Monte Carlo simulators. However, this strategy is not as general as our procedure because these works need an analytical expression for the two-particle Coulomb interaction V͑r ជ , r ជ k ͓t͔͒.…”

“…27 The use of a unique electric field ͑i.e., a unique average electrostatic potential͒ in the Boltzmann equation neglects the correct electron-electron correlations because each electron "feels" its own charge. [28][29][30][31][32] A powerful time-dependent technique to solve the Boltzmann equation is the semiconductor Monte Carlo method applied to electron devices. 27 In this work, we are interested in revisiting the computation of an ensemble of Coulomb-interacting particles in an open system without any of the approximations mentioned in the previous paragraphs.…”

3D Monte Carlo analysis of discrete dopant effects on electron noise in Si devices

“…The good agreement validates our approach of electron-ion interaction. It should be noted that this atomistic transport model also gives the correct mobility for minority electrons [8].…”

“…3D atomistic Monte Carlo simulation is now becoming the key-technique that gives a more realistic description of transport [6][7][8][9] if it includes a good description of both the long-range and short-range parts of the electron-ion interaction.…”