Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1−yCy(y ≤ 0.03)

Dollfus, P.; Galdin, S.; Hesto, P.

doi:10.1051/epjap:1999200

Cited by 12 publications

(10 citation statements)

References 26 publications

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“…(9) the alloy scattering potential included the potentials for the pairs Si-Ge, Si-C and Ge-C. Because of the strong difference in band structure between Si and C, it is to be expected that the value of alloy potential for Si 1-y C y is higher than the commonly accepted value of 0.8 eV for Si 1-x Ge x [19]. With the recent experimental study of mobility, we roughly estimate the alloy potential of Si-C couple in the range 1.4 -2 eV [20,21]. For simplicity alloy potential for Ge-C couple is assumed to be equal to alloy potential for Si-C couple.…”

Section: Resultsmentioning

confidence: 78%

Alloy and phonon scattering limited mobility in strain‐free ternary Si_1–x–yGe_xC_y

Mukhopadhyay

Basu

2004

Physica Status Solidi (b)

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Estimates are made of the mobility limited by alloy disorder and phonon scattering mechanisms in strain free Ge-rich ternary layer Si 1-x-y Ge x C y grown on Si substrate. The expression for alloy scattering potential in ternary was derived for the first time using virtual crystal approximation and it differs from the expressions for ternary and quaternary alloys of III -V compounds. The phonon scattering processes are taken to be identical with those in pure Ge. Conservative estimates of mobility made by using reasonable values of alloy scattering potential indicate that mobility is predominantly limited by alloy scattering for 0.85 < x < 1 and the effect of C mole fraction (y) is not much significant for y < 0.1.

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Section: Resultsmentioning

confidence: 78%

Alloy and phonon scattering limited mobility in strain‐free ternary Si_1–x–yGe_xC_y

Mukhopadhyay

Basu

2004

Physica Status Solidi (b)

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“…Compared to previous work in which the CdS shell of the investigated ZnSe/CdS QDs was synthesized by deposition of Cd and S separately [11], in this study the Voltage colloidal ZnSe/CdS core/shell, of which the CdS shell was synthesized by direct deposition of mixture of Cd and S solution, shows higher current and voltage and more than 2 times higher efficiency of 0.47 V and 2.23 mA and 0.56%, respectively, indicating the better crystallization quality of CdS shell synthesized by direct deposition. The strain is another issue in heterostructures that can increase electron mobility [55,56]. Since the crystal size of CdS bulk (5.82) is bigger than the ZnSe bulk (5.67Å) [57], one can expect strain in the CdS crystals.…”

Section: Resultsmentioning

confidence: 99%

Efficiency Enhanced Colloidal Mn‐Doped Type II Core/Shell ZnSe/CdS Quantum Dot Sensitized Hybrid Solar Cells

Jamshidi

Yuan

Chmyrov

et al. 2015

Journal of Nanomaterials

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Colloidal Mn-doped ZnSe/CdS core/shell quantum dots (QDs) are synthesized for the first time and employed as a strategy to boost the power conversion efficiency of quantum dot sensitized solar cells. By using Mn-doping as a band gap engineering tool for core/shell QDs an effective improvement of absorption spectra could be obtained. The mid-states generated by a proper Mn content alleviate carrier separation and enhance the electron injection rate, thus facilitating electron transport to the TiO2substrate. It is demonstrated that a device constructed with 0.25% Mn-doped ZnSe/CdS leads to an enhancement of the electron injection rate and power conversion efficiency by 4 times and 1.3, respectively.

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“…On the contrary, lowering the growth temperature is a good way to substantially improve the substitutional/interstitial carbon ratio. Using the same SiCH 6 and SiH 4 mass flows, we obtained maximum substitutional carbon concentrations going from 0.83% up to 1.44% with a growth temperature going from 650 • C down to 550 • C, which is the lowest temperature for which the growth rate (0.3 nm min −1 ) is not insignificant.…”

Section: Si 1−y C Y Layer Growth: Effects Of the Growth Temperaturementioning

confidence: 89%

“…∼ 0.0%) and that the Si cap layer thickness are carefully chosen, there is thus some hope that we might in the near future obtain higher mobilities with Si/Si 1−y C y /Si stacks than with intrinsic Si. This will of course depend upon whether the beneficial electron effective mass reduction (due to the tensile strain) or of the detrimental alloy scattering will predominate [6]. This goal in mind, we are going to present in the following paragraph some preliminary results on very high C content Si 1-y C y layer growth.…”

Section: Transport Propertiesmentioning

confidence: 99%

“…Indeed, the growth of tensile-strained Si 1−y C y layers on Si creates a lift of the six-fold degeneracy of the conduction band edge of Si 1−y C y and thus a type II band alignment between Si and Si 1−y C y . The resulting conduction band offset, which is of the order of 60 meV per atomic% of substitutional carbon atoms [3][4][5], can potentially be used in nMOS transistors [6,7]. However, the growth of C containing films is not an easy task because of the high mismatch between the Si and C lattices (52%), the low solubility of C in Si (10 −4 % C at 1400 • C) [8], and the tendency of C to precipitate into β poly type silicon carbide [9,10].…”

Section: Introductionmentioning

confidence: 99%

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On the distribution of eigenvectors of Toeplitz matrices with weakened requirements on the generating function

Замарашкин¹,

Тыртышников²

1997

Russ. Math. Surv.

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We have grown by reduced pressure-chemical vapour deposition Si/Si 1−y C y /Si heterostructures for electrical purposes. The incorporation of substitutional carbon atoms into Si creates a carrier confinement in the channel region of metal oxide semiconductor (MOS) transistors. Indeed, tensile-strained Si 1−y C y layers present a type II band alignment with Si, with a conduction band offset of the order of 60 meV per atomic% of substitutional carbon atoms. For small SiH 6 flows, all the incoming carbon atoms are incorporated into substitutional sites. At 550 • C, when the SiCH 6 flow increases, the substitutional carbon concentration saturates at 1.44%. Meanwhile, the total carbon concentration C T still increases, following a simple law: C T /(1 − C T ) = (0.88-0.92)(F(SiCH 6 )/(F(SiH 4 )). This is a sign that a growing number of C atoms incorporates into interstitial sites. The hydrogenated chemistry adopted does not enable us to achieve selectivity over SiO 2 -masked wafers, but does not generate any adverse loading effect. We have integrated Si/Si 1−y C y /Si stacks (which have been shown to be stable versus conventional gate oxidations and electrical activation anneals) into the channel region of ultra-short gate length (40 nm) nMOS transistors. Secondary ion mass spectrometry profiling has shown that C atoms segregate from the Si 1−y C y layer into the Si cap and the SiO 2 gate, but also that they block the diffusion paths of B coming from the anti-punch through layer towards the gate, generating very retrograde doping profiles. The addition of C leads to a slight degradation of the electron mobility which seems to be linked to the presence of C atoms into interstitial sites. Finally, we have shown that using higher silane and methylsilane mass flows enables us to obtain higher substitutional C concentrations (max: 1.98%) in our Si 1−y C y layers, with a good resulting structural quality.(Some figures in this article are in colour only in the electronic version) High C content Si/Si 1−y C y heterostructures for n-type metal oxide semiconductor transistors

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Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si_1−yC_y(y ≤ 0.03)

Cited by 12 publications

References 26 publications

Alloy and phonon scattering limited mobility in strain‐free ternary Si_1–x–yGe_xC_y

Alloy and phonon scattering limited mobility in strain‐free ternary Si_1–x–yGe_xC_y

Efficiency Enhanced Colloidal Mn‐Doped Type II Core/Shell ZnSe/CdS Quantum Dot Sensitized Hybrid Solar Cells

On the distribution of eigenvectors of Toeplitz matrices with weakened requirements on the generating function

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Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1−yCy(y ≤ 0.03)

Cited by 12 publications

References 26 publications

Alloy and phonon scattering limited mobility in strain‐free ternary Si1–x–yGexCy

Alloy and phonon scattering limited mobility in strain‐free ternary Si1–x–yGexCy

Efficiency Enhanced Colloidal Mn‐Doped Type II Core/Shell ZnSe/CdS Quantum Dot Sensitized Hybrid Solar Cells

On the distribution of eigenvectors of Toeplitz matrices with weakened requirements on the generating function

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Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si_1−yC_y(y ≤ 0.03)

Alloy and phonon scattering limited mobility in strain‐free ternary Si_1–x–yGe_xC_y

Alloy and phonon scattering limited mobility in strain‐free ternary Si_1–x–yGe_xC_y