Alloy and phonon scattering limited mobility in strain‐free ternary Si1–x–yGexCy

Mukhopadhyay, Banibrata; Basu, P. K.

doi:10.1002/pssb.200402108

Cited by 1 publication

(4 citation statements)

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“…The expression for hti, the relaxation time averaged over the carrier distribution function is given by [27][28][29] hti ¼…”

Section: Theorymentioning

confidence: 99%

“…The relaxation times for G valley electrons due to deformation potential acoustic (dp-ac), optical (op), intervalley (iv), alloy (al), and impurity (imp) scatterings are expressed as follows [27][28][29] :…”

Section: Theorymentioning

confidence: 99%

“…The relaxation times for Γ valley electrons due to deformation potential acoustic (dp‐ac), optical (op), intervalley (iv), alloy (al), and impurity (imp) scatterings are expressed as follows:

\frac{1}{τ_{d p - a c}} = \frac{3 {normalΞ}_{d p}^{2} {(m_{Γ})}^{3 / 2}}{2 \sqrt{2} π ℏ^{4} ρ v_{normals}^{2}} E^{1 / 2}

\frac{1}{τ_{o p}} = \frac{{(2 m_{d})}^{3 / 2}}{4 π ℏ^{3} ρ ω_{0}} {(\frac{D_{normalo normalp}}{a_{0}})}^{2} true[n_{normalq} {(E + ℏ ω_{0})}^{1 / 2} + true(n_{normalq} + 1 true) {(E - ℏ ω_{0})}^{1 / 2} true]

\frac{1}{τ_{Γ j}} = \frac{{(2 m_{Γ})}^{3 / 2} D_{Γ j}^{2}}{4 π ℏ^{3} ρ ω_{Γ j}} 2 true{\begin{matrix} left \\ center n_{normalq} [E + \end{matrix}

…”

Section: Theorymentioning

confidence: 99%

“…The expression for

true〈 τ true〉

, the relaxation time averaged over the carrier distribution function is given by

true〈 τ true〉 = \frac{\int_{0}^{\infty} τ W^{3 / 2} e^{- W} d W}{\int_{0}^{\infty} W^{3 / 2} e^{- W} d W}, W = \frac{E}{k_{normalB} T}

…”

Section: Theorymentioning

confidence: 99%

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Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge_1−xSn_x Alloy

Mukhopadhyay

Sen

Basu³

et al. 2017

Physica Status Solidi (b)

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Group IV semiconductor‐based alloy Ge1−xSnx can be grown on Si platform and a crossover from indirect (L valleys) to direct gap (Γ valley) occurs for x > 0.08. The direct gap alloy shows promise for use in high‐speed electronic and photonic devices. An earlier study predicted that the electron mobility in the alloy would increase by a few orders of magnitude above the value for pure Ge. In that work, however, electrons were assumed to occupy only the low effective mass Γ valley and only the deformation potential acoustic phonon and alloy scatterings were considered. In the present work, we give a more realistic estimate of the values of electron mobility in direct gap GeSn alloy, considering the Γ and L valleys and the phonon (deformation potential acoustic, optical and intervalley), alloy, and impurity scatterings. The effect of strain, both tensile and compressive, on the mobility is also studied. It is found that for higher alloy composition and suitable strain, mobility values ∼2 × 105 cm−2/V · s, more than 50 times higher than the value in pure Ge (3900 cm2/V · s) may be achieved. This is attributed to increased separation between Γ and L valleys and consequent reduction in intervalley scattering.

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“…The expression for hti, the relaxation time averaged over the carrier distribution function is given by [27][28][29] hti ¼…”

Section: Theorymentioning

confidence: 99%

Section: Theorymentioning

confidence: 99%

\frac{1}{τ_{d p - a c}} = \frac{3 {normalΞ}_{d p}^{2} {(m_{Γ})}^{3 / 2}}{2 \sqrt{2} π ℏ^{4} ρ v_{normals}^{2}} E^{1 / 2}

\frac{1}{τ_{o p}} = \frac{{(2 m_{d})}^{3 / 2}}{4 π ℏ^{3} ρ ω_{0}} {(\frac{D_{normalo normalp}}{a_{0}})}^{2} true[n_{normalq} {(E + ℏ ω_{0})}^{1 / 2} + true(n_{normalq} + 1 true) {(E - ℏ ω_{0})}^{1 / 2} true]

\frac{1}{τ_{Γ j}} = \frac{{(2 m_{Γ})}^{3 / 2} D_{Γ j}^{2}}{4 π ℏ^{3} ρ ω_{Γ j}} 2 true{\begin{matrix} left \\ center n_{normalq} [E + \end{matrix}

…”

Section: Theorymentioning

confidence: 99%

“…The expression for

true〈 τ true〉

, the relaxation time averaged over the carrier distribution function is given by

true〈 τ true〉 = \frac{\int_{0}^{\infty} τ W^{3 / 2} e^{- W} d W}{\int_{0}^{\infty} W^{3 / 2} e^{- W} d W}, W = \frac{E}{k_{normalB} T}

…”

Section: Theorymentioning

confidence: 99%

See 2 more Smart Citations

Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge_1−xSn_x Alloy

Mukhopadhyay

Sen

Basu³

et al. 2017

Physica Status Solidi (b)

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Alloy and phonon scattering limited mobility in strain‐free ternary Si_1–x–yGe_xC_y

Cited by 1 publication

References 18 publications

Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge_1−xSn_x Alloy

Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge_1−xSn_x Alloy

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Alloy and phonon scattering limited mobility in strain‐free ternary Si1–x–yGexCy

Cited by 1 publication

References 18 publications

Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1−xSnx Alloy

Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge1−xSnx Alloy

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Alloy and phonon scattering limited mobility in strain‐free ternary Si_1–x–yGe_xC_y

Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge_1−xSn_x Alloy

Prediction of Large Enhancement of Electron Mobility in Direct Gap Ge_1−xSn_x Alloy