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Single crystals of sucrose grown in H20 or D20 solutions have been irradiated by X-rays at room temperature. The nature of the stable free radicals has been examined by ENDOR spectroscopy, complemented with Xand Q-band ESR measurements. At least two radicals are present. One is definitely and the other possibly characterized by one a-and two 0-proton hyperfine couplings and an anisotropic g factor. They have been assigned to radicals of the type RCOCHCH2 resulting from an opening of the glucose and fructose rings.

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A method is proposed to account for the effects of Schottky barrier height inhomogeneities on the Richardson constant (A∗) extracted from current-voltage-temperature (I-V-T) measurements. Our approach exploits a correlation between the extracted Richardson constant and effective barrier height. As a test case, the method is applied to I-V-T measurements performed on IrOx/n-ZnO Schottky diodes. A homogeneous A∗ value of 27±7 A cm−2 K−2 is obtained, in close agreement with the theoretically expected value of 32 A cm−2 K−2 for n-type ZnO.

No abstract