Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes

Sarpatwari, K.; Awadelkarim, Osama O.; Allen, Martin W.; Durbin, Steven M.; Mohney, Suzanne E.

doi:10.1063/1.3156031

Cited by 39 publications

(31 citation statements)

References 10 publications

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“…For emerging semiconductors such as ZnO, Schottky contacts are often far from ideal, and the reported Richardson constant values are significantly lower than the theoretical value. The extracted A* values about 0.15-6.1 A cm −2 K −2 are far lower [40][41][42] than the theoretical value. We will use the application of inhomogeneous-barrier analysis to determine the modified Richardson constant of n-ZnO.…”

Section: Forward Bias I-v Characteristics As a Function Of Temperaturecontrasting

confidence: 52%

Structural and electrical characterization of ZnO-based homojunctions

Bacaksız

Çankaya

Polat

et al. 2010

Journal of Alloys and Compounds

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Section: Forward Bias I-v Characteristics As a Function Of Temperaturecontrasting

confidence: 52%

Structural and electrical characterization of ZnO-based homojunctions

Bacaksız

Çankaya

Polat

et al. 2010

Journal of Alloys and Compounds

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“…13 Using such diodes it was possible for the first time to determine an experimental value for ZnO's Richardson constant similar to the value expected theoretically. 18,19 The low leakage current of such diodes also allowed the observation of a vacuum-activated surface conduction path. 19 Surface conduction in ZnO is a phenomenon that has been known for a long time.…”

Section: Introductionmentioning

confidence: 98%

“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] The focus was mostly on optimization of the rectifying properties by pretreatment of the ZnO surface using wet chemical methods 4,8,9,10,14 or remote plasma treatment 3,4,6,7 or the usage of Schottky diodes for material characterization, 2,5,15 as photodetectors 1,16 or as gates in field-effect transistors. 11,17 Recently, a major breakthrough presenting a simple and reproducible route for the fabrication of high-quality Schottky barriers on ZnO by reactive direct-current (DC) sputtering of the Schottky contact metal was published.…”

Section: Introductionmentioning

confidence: 99%

Dielectric Passivation of ZnO-Based Schottky Diodes

Wenckstern

Müller

Biehne

et al. 2009

Journal of Elec Materi

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Au/ZnO Schottky diodes were investigated in a temperature range from 100 K to 450 K. A vacuum-activated surface conduction path significantly reducing the rectification of the Au/ZnO Schottky barrier diodes was observed. The rectifying properties slowly recovered on storing the diodes in ambient air. The formation of the vacuum-activated surface conduction path can be completely suppressed by dielectric passivation of the Schottky diode.

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“…Bhuiyan et al 46 derived a model taking into account this dependence, where the ideality factor, n(T), and ( ) are given empirically by:…”

Section: Measurement Of the Temperature Dependence Of The I-v (I-v-t)mentioning

confidence: 99%

Analysis of Schottky Contact Formation in Coplanar Au/ZnO/Al Nanogap Radio Frequency Diodes Processed from Solution at Low Temperature

Semple

Rossbauer

Anthopoulos

2016

ACS Appl. Mater. Interfaces

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Much work has been carried out in recent years in fabricating and studying the Schottky contact formed between various metals and the n-type wide bandgap semiconductor zinc oxide (ZnO). In spite of significant progress, reliable formation of such technologically interesting contacts remains a challenge. Here, we report on solution-processed ZnO Schottky diodes based on a coplanar Al/ZnO/Au nano-gap architecture and study the nature of the rectifying contact formed at the ZnO/Au interface. Resultant diodes exhibit excellent operating characteristics, including low-operating voltages (±2.5 V) and exceptionally high current rectification ratios of >10 6 that can be independently tuned via scaling of the nano-gap's width. The barrier height for electron injection responsible for the rectifying behaviour is studied using current-voltage-temperature and capacitance-voltage measurements (C-V) yielding values in the range of 0.54-0.89 eV. C-V measurements also show that electron traps present at the Au/ZnO interface appear to become less significant at higher frequencies, hence making the diodes particularly attractive for high frequency applications. Finally, an alternative method for calculating the Richardson constant is presented yielding a value of 38.9 A cm -2 K -2 which is close to the theoretically predicted value of 32 A cm -2 K -2 . The implications of the obtained results for the use of these coplanar Schottky diodes in radio frequency applications is discussed.2

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Extracting the Richardson constant: IrOx/n-ZnO Schottky diodes

Cited by 39 publications

References 10 publications

Structural and electrical characterization of ZnO-based homojunctions

Structural and electrical characterization of ZnO-based homojunctions

Dielectric Passivation of ZnO-Based Schottky Diodes

Analysis of Schottky Contact Formation in Coplanar Au/ZnO/Al Nanogap Radio Frequency Diodes Processed from Solution at Low Temperature

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