Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.
In this study, we successfully fabricated vertical GaN merged PiN Schottky (MPS) diodes and comparatively investigated the cyclic p-GaN width (Wp) dependence of their electrical characteristics, including turn-on voltage and reverse leakage current. The MPS diodes with Wp of more than 6 µm can turn on at around 3 V. Increasing Wp can suppress the reverse leakage current. Moreover, the vertical GaN MPS diode with the breakdown voltage of 2 kV was realized for the first time.
Electrical properties of (Ba, Sr)TiO3 [BST] films have been investigated on
RuO2/Ru and Ru electrodes instead of Pt, because they are easy to be etched. BST
films were deposited at a substrate temperature of T
s=420° C and a reactor pressure of
P=1.5 Torr by employing a two-step liquid source chemical vapor deposition (CVD)
process. BST films on RuO2/Ru were electrically shorted, which was considered to be
caused by surface roughening during BST film deposition and/or post-annealing. In
the case of Ru electrodes, an equivalent SiO2 thickness of t
eq=0.50 nm (a dielectric
constant of ε
r=190), a leakage current of J
L=4.6×10-8 A/cm2 at +1.1 V, and a
dielectric loss of tan
δ=0.018 were achieved at a total film thickness of 250 Å, by
restricting Ru surface oxidation and its surface roughening. Moreover, BST film
deposition on Ru storage nodes, 0.24 µ m wide, 0.6 µ m deep, 0.15 µ m high, and
each spaced by 0.3–0.14 µ m, verified that the storage capacitance can be successfully
increased by using sidewalls of the storage node, without a significant increase in the
leakage current.
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