Vertical Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

Lin, Ching‐Long; Yuda, Yohei; Wong, Man Hoi; Sato, Mayuko; Takekawa, Nao; Konishi, Kazuo; Watahiki, Tatsuro; Yamamuka, Mikio; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka

doi:10.1109/led.2019.2927790

Cited by 150 publications

(47 citation statements)

References 20 publications

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“…Our latest SBDs with both a field plate and a N-implanted guard ring, which is schematically illustrated in Fig. 8, achieved an enhancement of V br to 1.43 kV with keeping the same level of R on [81]. Mg-ion implantation doping and fluorine treatment were also employed to form guard rings [82,83].…”

Section: Sbdmentioning

confidence: 99%

β-Ga2O3 material properties, growth technologies, and devices: a review

Higashiwaki

2022

AAPPS Bull.

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Rapid progress in β-gallium oxide (β-Ga2O3) material and device technologies has been made in this decade, and its superior material properties based on the very large bandgap of over 4.5 eV have been attracting much attention. β-Ga2O3 appears particularly promising for power switching device applications because of its extremely large breakdown electric field and availability of large-diameter, high-quality wafers manufactured from melt-grown bulk single crystals. In this review, after introducing material properties of β-Ga2O3 that are important for electronic devices, current status of bulk melt growth, epitaxial thin-film growth, and device processing technologies are introduced. Then, state-of-the-art β-Ga2O3 Schottky barrier diodes and field-effect transistors are discussed, mainly focusing on development results of the author’s group.

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Section: Sbdmentioning

confidence: 99%

β-Ga2O3 material properties, growth technologies, and devices: a review

Higashiwaki

2022

AAPPS Bull.

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“…These impurities are typical contaminants in as-grown β-Ga 2 O 3 crystals, and/or potentially useful as compensating acceptor dopants to obtain highresistive or semi-insulating material. [21][22][23][24][25] We have also investigated their interaction with hydrogen. Indeed, H i acts exclusively as a shallow donor in β-Ga 2 O 3 and is likely to be trapped by acceptor impurities.…”

Section: Introductionmentioning

confidence: 99%

Self-trapped hole and impurity-related broad luminescence in β-Ga2O3

Frodason

Johansen

Vines

et al. 2020

Journal of Applied Physics

103

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“…Zhou et al [ 149 ] implemented a Mg implanted ET device on a vertical β-Ga 2 O 3 SBD with a reverse blocking voltage of 1.55 kV and a low specific on-resistance of 5.1 mΩcm 2 (epi thickness 10 μm) and an FOM of 0.47 GWcm −2 . Analogously, Lin et al [ 150 ] implemented a guard ring with or without an FP on vertical SBDs. The terminated devices exhibited a specific on-resistance of 4.7 mΩcm 2 and a V br of 1.43 kV.…”

Section: Gallium Oxide (Ga 2 O 3 )mentioning

confidence: 99%

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

et al. 2022

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Currently, a significant portion (~50%) of global warming emissions, such as CO2, are related to energy production and transportation. As most energy usage will be electrical (as well as transportation), the efficient management of electrical power is thus central to achieve the XXI century climatic goals. Ultra-wide bandgap (UWBG) semiconductors are at the very frontier of electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and solar-blind deeper ultraviolet optoelectronics. Gallium oxide—Ga2O3 (4.5–4.9 eV), has recently emerged pushing the limits set by more conventional WBG (~3 eV) materials, such as SiC and GaN, as well as for transparent conducting oxides (TCO), such asIn2O3, ZnO and SnO2, to name a few. Indeed, Ga2O3 as the first oxide used as a semiconductor for power electronics, has sparked an interest in oxide semiconductors to be investigated (oxides represent the largest family of UWBG). Among these new power electronic materials, AlxGa1-xO3 may provide high-power heterostructure electronic and photonic devices at bandgaps far beyond all materials available today (~8 eV) or ZnGa2O4 (~5 eV), enabling spinel bipolar energy electronics for the first time ever. Here, we review the state-of-the-art and prospects of some ultra-wide bandgap oxide semiconductor arising technologies as promising innovative material solutions towards a sustainable zero emission society.

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Vertical Ga₂O₃ Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

Cited by 150 publications

References 20 publications

β-Ga2O3 material properties, growth technologies, and devices: a review

β-Ga2O3 material properties, growth technologies, and devices: a review

Self-trapped hole and impurity-related broad luminescence in β-Ga2O3

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

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Vertical Ga2O3 Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation

Cited by 150 publications

References 20 publications

β-Ga2O3 material properties, growth technologies, and devices: a review

β-Ga2O3 material properties, growth technologies, and devices: a review

Self-trapped hole and impurity-related broad luminescence in β-Ga2O3

Ga2O3 and Related Ultra-Wide Bandgap Power Semiconductor Oxides: New Energy Electronics Solutions for CO2 Emission Mitigation

Contact Info

Product

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About

Vertical Ga₂O₃ Schottky Barrier Diodes With Guard Ring Formed by Nitrogen-Ion Implantation