β-Ga2O3 material properties, growth technologies, and devices: a review

Higashiwaki, Masataka

doi:10.1007/s43673-021-00033-0

Cited by 91 publications

(60 citation statements)

References 100 publications

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“…Most Ga 2 O 3 /GaN heterointerfaces were developed by depositing Ga 2 O 3 on the GaN surface utilizing numerous techniques such as metalorganic chemical vapour deposition (MOCVD), sputtering, thermal oxidation, and pulse laser deposition. ,− Among various approaches, MOCVD has the demerit of using hazardous precursors that restrict the feasibility of mass production . Also, while depositing the film using sputtering and pulsed laser deposition (PLD), the substrate surface preparation may be critical in determining the adhesion; the setup cost is also very high. , On the other hand, thermal oxidation is a simple and convenient method for creating oxides directly on the substrate.…”

Section: Introductionmentioning

confidence: 99%

Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

Varshney

Sharma

Vashishtha

et al. 2022

ACS Appl. Electron. Mater.

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The broad-band ultraviolet (BBUV) photodetectors (PDs) responding to multiple ultraviolet (UV) wavelengths (230–400 nm) have received considerable attention in various fields, such as missile warnings, fire alarms, astronomical imaging, etc. Due to increased demand for BBUVPDs, there is a need for energy-efficient self-driven devices. This work used a simple thermal oxidation process to develop a β-Ga2O3/GaN heterointerface-based device that shows ultrahigh performance in self-driven, low bias, and spectrally broad responsive range. The fabricated device exhibits excellent stable performance in the self-driven mode of operation with an ultrahigh responsivity of 1.2 × 103 mA W–1 and a very high external quantum efficiency of 3.8 × 102% under 266 nm light illumination. Further, the performance of the fabricated device in the photoconductive mode (@5 V) displays an ultrahigh responsivity of 2.21 × 105 mA W–1, a very low noise equivalent power of 10–14 W Hz–1/2, and a very high external quantum efficiency of 104%. Furthermore, the device responds to the illumination wavelength of 355 nm, with a responsivity of 0.74 mA W–1 (2.2 × 104 mA W–1) at a 0 V (5 V) applied bias. The study will boost the prospects for creating next-generation optoelectronic devices to comprehend and utilize Ga2O3/GaN heterointerface devices.

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Section: Introductionmentioning

confidence: 99%

Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

Varshney

Sharma

Vashishtha

et al. 2022

ACS Appl. Electron. Mater.

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“…However, β-Ga 2 O 3 grown by MBE is reported to exhibit an unintentional background doping density on the order of %10 16 cm À3 . [74,75] It is challenging to achieve low doping density with MBE, because the background O species easily oxidize the dopant source surface, making nonuniform dopant flux. MBE epitaxial growth of β-Ga 2 O 3 was first performed on (100) cleavage plane, because it has weak ionic bonds, which promotes diffusion of adatoms, thereby enhancing the growth rate supposedly.…”

Section: Molecular Beam Epitaxy and Halide Vapor-phase Epitaxymentioning

confidence: 99%

A Review of Recent Progress in β‐Ga₂O₃ Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition

Waseem

Ren

Huang

et al. 2022

Physica Status Solidi (a)

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Gallium oxide (Ga 2 O 3 ), a wide-bandgap (WBG) semiconductor, has emerged as a highly promising material for high-power electronics, high-temperature gas sensors, and solar-blind UV photodetectors. Compared with conventional semiconductors, Ga 2 O 3 has a much larger Baliga's figure of merit (BFOM) of %3400, which makes it beneficial for developing efficient highvoltage power-switching devices. [1] It has five polymorph crystal phases: α-corundum rhombohedral, β-monoclinic, γ-defective spiral, δ-cubic, and ε-orthorhombic or hexagonal. [2,3] Among all these phases, monoclinic β-Ga 2 O 3 is the thermally and chemically most stable crystal structure. β-Ga 2 O 3 is optically transparent to %250 nm because of its wide bandgap (%4.9 eV) and its n-type conductivity can be tuned over 5 orders of magnitude by adding n-type dopants like Ge, Sn, or Si; these characteristics also make it suitable for deep-UV optoelectronic applications. [4,5] In addition, its polycrystalline films with oxygen vacancies have been widely investigated as sensors for several gasses, including O 2 . CO, CH 4 , and H 2 , which adsorb on the film surface changing its electrical conductivity. [6][7][8][9] For power electronics, conventional Si-based transistors with a narrow bandgap of 1.12 eV cannot achieve high voltage and hightemperature operation due to its intrinsic material properties. With continued advances in semiconductor technologies, it has become possible to construct next-generation power devices using WBG compound semiconductors such as GaN, SiC, Ga 2 O 3 , and diamond with excellent electrical characteristics. The GaN devices improved the overall bandwidth and power consumption performance of radio frequency electronics compared with previous generation electronics and enabled the monolithic circuit demonstration. [10,11] The enhanced device performance such as a high electrical breakdown field is attributed to the relatively larger bandgap. Accordingly, WBG semiconductors have been extensively investigated and explored. For instance, GaN has a well-developed growth process and its n-and p-type doping can readily be controlled, and it has been extensively investigated for electronic and optoelectronic applications. [12][13][14][15] Fast chargers

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“…Gallium oxide is a promising wide-bandgap semiconductor [1]. In the last few years, interest to the study of this material has significantly grown [2]. This interest can be explained by the broad scope of application of gallium oxide in various optoelectronic devices [2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Effect of Solution Composition on the Morphology of Synthesized β-Ga2O3 Particles

Ryabkova¹,

Sokura²,

Ivanov³

et al. 2023

Rev. Adv. Mater. Technol.

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Micro- and nanoparticles of β-Ga2O3 are synthesized as a result of chemical reaction of an aqueous solution of gallium nitrate and various alkalis: ammonia, sodium, potassium, and lithium hydroxides. It is shown that particles morphology depends on the type and concentration of alkali. The use of microwave treatment of ammonia containing solutions made it possible to change the shape of particles from ellipsoidal to parallelepiped while maintaining their size. In contrast to the synthesis with ammonia, for other alkalis dispersed particles were obtained only at a ratio of alkali to gallium nitrate equal to 3, and these particles did not belong to the gallium oxide β-phase.

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β-Ga2O3 material properties, growth technologies, and devices: a review

Cited by 91 publications

References 100 publications

Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

A Review of Recent Progress in β‐Ga₂O₃ Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition

Effect of Solution Composition on the Morphology of Synthesized β-Ga2O3 Particles

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β-Ga2O3 material properties, growth technologies, and devices: a review

Cited by 91 publications

References 100 publications

Ga2O3/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

Ga2O3/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition

Effect of Solution Composition on the Morphology of Synthesized β-Ga2O3 Particles

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Product

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About

Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

Ga₂O₃/GaN Heterointerface-Based Self-Driven Broad-Band Ultraviolet Photodetectors with High Responsivity

A Review of Recent Progress in β‐Ga₂O₃ Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition