“…Ru and RuO 2 thin films have been receiving much attention because of their good conductivity, low temperature coefficient of resistance (TCR), and high thermal stability [7]. Therefore, they have been investigated for many applications such as diffusion barriers for oxygen [8,9], thin film resistors, and electrode materials for ferroelectric oxides [10][11][12]. Recently, there has been increasing interest in the deposition of metallic Ru films as well as in the study of RuO 2 film because Ru film can be used as an adhesion layer for a diffusion barrier as well as an electrode for dynamic random access memory (DRAM).…”