The decomposition process of tetraethylorthosilicate (TEOS) and ozone at atmospheric pressure was measured in a closed vessel by in-situ Fourier-transform infrared absorption (FT-IR) analysis, and the changes of the deposition rate and the overall sticking probability β of the film precursor were obtained along the flow direction in a flow-type reactor. It has been found that the film precursors are formed by TEOS decomposition with O-atoms and/or ozone in the gas phase, and that CH3CHO may be the first product, followed by the oxidation to CO2 and H2O via HCHO. It is also shown that the film quality changes along the flow direction, that is, O-H bonds in the film decrease and the β-value increases as the reaction proceeds. These results may show that there are several kinds of precursors, and the sticky (unstable) precursors become dominant in the later stages.

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Heat dissipation is one of the most important issues for the reliability of electronic equipment. Boiling can be a very efficient heat transfer mechanism when used to face with the electronic technology needs of efficient and compact heat sinks. Recently, cellular structured materials both stochastic and periodic, particularly open cell metal foams, have been proposed as possible enhanced surfaces to lower the junction temperatures at high heat fluxes. Up today, most of the research on metal foams only regards single phase flow, whereas the two phase flow is still almost unexplored. This paper presents an experimental study on the heat transfer of R134a during flow boiling inside a 5 PPI (Pores Per linear Inch) copper foam, which is 5 mm high, 10 mm wide and 200 mm long, and it is brazed on a 10 mm thick copper plate. The experimental measurements were carried out by imposing three different heat fluxes (50, 75, and 100 kW m -2 ) and by varying the refrigerant mass velocity between 50 and 200 kg m -2 s -1 and the vapour quality from 0.2 to 0.90, at constant saturation temperature (30°C). The effects of the refrigerant mass flow rate, heat flux and vapour quality on the heat transfer coefficient, dry out phenomenon, and pressure drop are studied.

Electrical properties of (Ba, Sr)TiO3 [BST] films have been investigated on RuO2/Ru and Ru electrodes instead of Pt, because they are easy to be etched. BST films were deposited at a substrate temperature of T s=420° C and a reactor pressure of P=1.5 Torr by employing a two-step liquid source chemical vapor deposition (CVD) process. BST films on RuO2/Ru were electrically shorted, which was considered to be caused by surface roughening during BST film deposition and/or post-annealing. In the case of Ru electrodes, an equivalent SiO2 thickness of t eq=0.50 nm (a dielectric constant of ε r=190), a leakage current of J L=4.6×10-8 A/cm2 at +1.1 V, and a dielectric loss of tan δ=0.018 were achieved at a total film thickness of 250 Å, by restricting Ru surface oxidation and its surface roughening. Moreover, BST film deposition on Ru storage nodes, 0.24 µ m wide, 0.6 µ m deep, 0.15 µ m high, and each spaced by 0.3–0.14 µ m, verified that the storage capacitance can be successfully increased by using sidewalls of the storage node, without a significant increase in the leakage current.

We propose a new light direction controlling backlight for nonglasses field sequential stereoscopic LCD. This backlight using a double‐sided prism sheet can change the direction of light by switching the light sources. We made a prototype, and demonstrated that the light from the backlight could be separated into the required directions