Electrical properties of sputtered (Ba, Sr)TiO3 thin films prepared by two-step deposition method

Lee, Byong‐Taek; Kim, Wan Don; Lee, Ki Hoon; Lim, Heejin; Kang, Chang Seok; Hasegawa, Hideki; Joo, Sung-Yeon; Park, Hong Bae; Yoo, Cha Young; Lee, Sang In; Lee, Moon Yong

doi:10.1007/s11664-999-0240-6

Cited by 6 publications

(1 citation statement)

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“…BT and BST films can be formed by various methods, such as chemical solution deposition (CSD) [1,2,4], metal organic chemical vapor deposition (MOCVD) [5][6][7], rf sputtering [8][9][10][11][12][13] and Pulsed Laser Ablation Deposition (PLAD) [14]. CSD Method is of particular interest because of its good control of stoichiometry, ease of fabrication and low temperature synthesis.…”

Section: Introductionmentioning

confidence: 99%

Surface Roughness and Grain Size Characterization of Annealing Temperature Effect For Growth Gallium and Tantalum Doped Ba0.5 Sr0.5TiO3Thin Film

et al. 2011

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SURFACE ROUGHNESS AND GRAIN SIZE CHARACTERIZATION OF ANNEALING TEMPERATURE EFFECT FOR GROWTH GALLIUM ANDTANTALUM DOPED Ba 0.5 Sr 0.5 TiO 3 THIN FILM. Thin films 10 % gallium oxide doped barium strontium titanate (BGST) and 10 % tantalum oxide doped barium strontium titanate (BTST) were prepared on p-type Si (100) substrates using chemical solution deposition (CSD) method with 1.00 M precursor. The films were deposited by spin coating method with spinning speed at 3000 rpm for 30 seconds. The post deposition annealing of the films were carried out in a furnace at 200 o C, 240 o C, 280 o C (low temperature) for 1 hour in oxygen gas atmosphere. The surface roughness and grain size analysis of the grown thin films are described by atomic force microscope (AFM) method at 5000 nm x 5000 nm area. The rms surface roughness BGST thin films at 5000 nm x 5000 nm area are 0. o C would result in decreasing the rms roughness and grain size. Therefore, rms roughness and grain size would have the strong correlation annealing temperature.

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