Si bulk lifetime techniques are really sensitive to Co after drive-in step performed by RTP: the bulk diffusion length is strongly reduced, even at very low level of contamination. In case of p-type silicon, we point out that low energy photodissociation enhances this decrease, showing a pairing behavior of Co that has demonstrated to be with Boron, as for the well known Fe-B pairs. A detailed study of the interaction of Co with Si which has been focused on the detection of Co in Si using bulk lifetime methods, especially the SPV technique has been carried out. Evidence of recombination centers related to Co by Deep Level Transient Spectroscopy (DLTS) is shown, along with the activation of Co, its recovery kinetics in p-type Si and the low limit of detection of the SPV technique.All rights reserved. No part of contents of this paper may be reproduced or transmitted in any form or by any means without the written permission of Trans Tech Publications Ltd, www.scientific.net.
This paper presents the characterization done by FTIR method of a carbon-doped SiOC film deposited in a 300mm PECVD reactor, using the diethoxymethylsilane molecule as main precursor and other reactant gases, and then baked in a dedicated post- deposition treatment chamber, where the porosity creation is stimulated by a flow of electrons. The effects of tunable parameters in the post-deposition curing chamber to the absorbance peak and to the dielectric constant are presented. It was found that C-Hx group absorption peaks reveal a wavenumber shift following different curing conditions, along with the Si-(CH3)x absorption peak. Furthermore the primary effect of curing temperature on dielectric constant and the role played by additional parameters on the restrucuration process is presented. It is shown that some of the curing chamber parameters although affecting greatly the Si-(CH3)x and H-Si-O absorption peaks associated to cross-linking processes, do not cause a relevant variation in the dielectric constant
The present paper shows the characterization of the shallow trench isolation (STI) profile of 65 nm node ULSI logic products done with an automated AFM system and high-density carbon tips. The combined utilisation of special tips and dedicated analysis algorithms has allowed the precise measurement of both the step height between the isolation oxide and the silicon active area, and the depth of the divot that is generally formed at the isolation oxide's sidewalls. Moreover, the robustness of this methodology has been assessed by evaluating the maximum number measurement runs before the appearance of relevant artifacts due to tips' apex modifications. Finally, TEM cross-sections were run in order to determine the accuracy of the measurements.
This paper demonstrates, for the first time, that subatmospheric chemical vapour deposition (SACVD) oxide is a good candidate for 45-nm node as Shallow Trench Isolation (STI) gap-fill as well as a mobility enhancement technique for both <100> and <110> channel orientations. Respectively, 11% and 18% drive current enhancement for NMOS and PMOS transistors as well as a 12% ring oscillator speed improvement compared to a conventional High Density Plasma (HDP) process are reported.
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