This paper presents the characterization done by FTIR method of a carbon-doped SiOC film deposited in a 300mm PECVD reactor, using the diethoxymethylsilane molecule as main precursor and other reactant gases, and then baked in a dedicated post- deposition treatment chamber, where the porosity creation is stimulated by a flow of electrons. The effects of tunable parameters in the post-deposition curing chamber to the absorbance peak and to the dielectric constant are presented. It was found that C-Hx group absorption peaks reveal a wavenumber shift following different curing conditions, along with the Si-(CH3)x absorption peak. Furthermore the primary effect of curing temperature on dielectric constant and the role played by additional parameters on the restrucuration process is presented. It is shown that some of the curing chamber parameters although affecting greatly the Si-(CH3)x and H-Si-O absorption peaks associated to cross-linking processes, do not cause a relevant variation in the dielectric constant
A full ULK (Ultra Low-k) integration using TFHM (Trench First Hard Mask) architecture [1] is demonstrated in a high density CMOS 45nm device. 130nm-pitch metal features have been resolved using a 193nm immersion hyper-NA (Numerical Aperture) scanner and an optimized OPC (Optical Proximity Correction) model. RC performance and yield results are presented for a fully-integrated 45nm ULK backend. An overall speed performance enhancement of >10% has been confirmed within a microprocessor application at the 65nm technology node when replacing Low-k dielectric (k=2.9) with ULK (k=2.5) material.
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