FTIR Study of Porous Low Dielectric Constant SiOC Film under Various Post-Deposition Curing Conditions

Sardo, M.; Lagha, A.; Humbert, A.; Desbois, M. Bornert G.; Laurent, Nicolas

doi:10.1149/1.2218490

Cited by 2 publications

(2 citation statements)

References 2 publications

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“…Previous studies allowed determining the optimal treatment conditions. 11 For instance, the treatment temperature and the e-beam dose were adjusted to allow a good film cross-linking and to obtain a porous film with k close to 2.5. These optimal conditions were 100 doses of 100 C/m 2 with a bias of 100 V performed at 400°C for 10 min.…”

Section: Methodsmentioning

confidence: 99%

Comparison Between E-beam and Ultraviolet Curing to Perform Porous a-SiOC:H

Jousseaume

Zenasni

Favennec

et al. 2007

J. Electrochem. Soc.

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Porous ultralow-k films are required by the microelectronics industry as interlayer dielectrics for 65 nm technologies and below. These porous insulating films can be deposited by plasma-enhanced chemical vapor deposition using a porogen approach. It consists of the codeposition of a matrix precursor and a sacrificial organic porogen, and then on a post-treatment to remove the organic porogen phase and create porosity in the film. In this work, an e-beam assisted thermal curing was compared to an ultraviolet-assisted thermal curing. Basic film properties such as k, film shrinkage, porosity, pore size, and pore size distribution were evaluated. NMR and Fourier transform infrared analyses were used to study the chemical modifications induced by the post-treatment. These analyses show that the post-treatment impact depends on the radiation used. Both treatments lead to a removal of terminal nonbridging bonds such as Si-OH, Si-H, and Si-CH 3 and can contribute to a subsequent formation of Si-O-Si crosslinks. Both treatments remove methyls from Si-CH 3 , but the e-beam induces a Si-H bond increase while the UV bulb used decreases the Si-H contribution. The cross-linking improvement induces an increase of Young's modulus, the elastic properties being mainly correlated to the Si-O-Si volumic bond concentration in the film.A new challenge for the semiconductor industry is to reach the low permittivity ͑k Ͻ 2.4͒ required for advanced interconnections by ITRS for sub-65 nm technology nodes. Porosity introduction in an a-SiOC:H matrix ͑written down SiOCH in the following͒ is the main research field investigated. The porogen approach is one way to produce porous materials using plasma-enhanced chemical vapor deposition ͑PECVD͒. It consists of the codeposition of a matrix precursor and a sacrificial organic porogen. 1-3 After deposition, porogens are eliminated in subsequent steps, leaving their initial sites empty and creating porosity. To decrease the porogen removal duration and temperature, thermally assisted processes can be used, with UV irradiation or electronic bombardment ͑e-beam͒. 4-6 Many works were performed on the impact of e-beam or UV curing on an insulating SiOCH matrix as a hardener treatment. In this case, the main results reported are an increase of mechanical properties, the exact mechanism being not fully understood. 7-9 Yoda et al. reported also the use of e-beam curing to enhance the mechanical properties of porous films. 10 In this study, an e-beam thermally assisted curing treatment used to remove porogens is compared to a UV thermally assisted one. Basic film properties after deposition and curing are described: investigations with physicochemical analyses, porosity measurements by ellipsometry coupled with solvent adsorption, and grazingincidence small-angle x-ray scattering ͑GISAXS͒. Mechanical and electrical studies were carried out to better understand the impact of each porogen removal treatment on the chemical structure of the dielectric films. After a brief presentation of the experimental tec...

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Section: Methodsmentioning

confidence: 99%

Comparison Between E-beam and Ultraviolet Curing to Perform Porous a-SiOC:H

Jousseaume

Zenasni

Favennec

et al. 2007

J. Electrochem. Soc.

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“…Optimal conditions were determined in previous studies. 20 For instance, the temperature and the e-beam dose were adjusted to produce good film crosslinking and a porous film with a value of k close to 2.5. These conditions were 100 doses of 100 mC m À2 with a bias of 100 V at 400 1C for 10 min.…”

Section: Sample Preparationmentioning

confidence: 99%

Spin-coated and PECVD low dielectric constant porous organosilicate films studied by 1D and 2D solid-state NMR

Gerbaud

Hediger

Bardet

et al. 2009

Phys. Chem. Chem. Phys.

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In the research field of the sub-65 nm semiconductor industry, organosilicate SiOCH films with low dielectric constant (k < 2.4) need to be developed in order to improve the performance of integrated circuits [International Roadmap for Semiconductors (ITRS), San Jose, CA, 2004]. One way to produce SiOCH films of low dielectric constant is to introduce pores into the film. This is usually obtained in two steps. Firstly, co-deposition of a matrix precursor, with a sacrificial organic porogen, either by plasma enhanced chemical vapor deposition (PECVD) or spin-coating. Secondly, application of a specific thermal treatment to remove the porogen and create the porosity. This last step can be improved by adding to the thermal process a super-critical CO(2) treatment, an UV irradiation or an electronic bombardment (e-beam). In this study, the two deposition processes as well as the various treatments applied to eliminate the porogens were evaluated and compared using high-resolution solid-state NMR. For this purpose, hybrid (containing porogens) and porous films were extensively characterized on the basis of their (1)H, (13)C and (29)Si high-resolution NMR spectra. Information was obtained concerning the crosslinking of the Si skeleton. Spectral features could be correlated to the processes used. Isotropic chemical shift analyses and 2D correlation NMR experiments were used to show the existence and nature of the interactions between the matrix precursor and the organic porogen.

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FTIR Study of Porous Low Dielectric Constant SiOC Film under Various Post-Deposition Curing Conditions

Cited by 2 publications

References 2 publications

Comparison Between E-beam and Ultraviolet Curing to Perform Porous a-SiOC:H

Comparison Between E-beam and Ultraviolet Curing to Perform Porous a-SiOC:H

Spin-coated and PECVD low dielectric constant porous organosilicate films studied by 1D and 2D solid-state NMR

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