In this paper, a case of molybdenum contamination from wet cleaning is discussed, and various techniques are compared for their ability to detect molybdenum. In addition, the impact of this sort of contamination on the electrical results of a bipolar device is studied.
Si bulk lifetime techniques are really sensitive to Co after drive-in step performed by RTP: the bulk diffusion length is strongly reduced, even at very low level of contamination. In case of p-type silicon, we point out that low energy photodissociation enhances this decrease, showing a pairing behavior of Co that has demonstrated to be with Boron, as for the well known Fe-B pairs. A detailed study of the interaction of Co with Si which has been focused on the detection of Co in Si using bulk lifetime methods, especially the SPV technique has been carried out. Evidence of recombination centers related to Co by Deep Level Transient Spectroscopy (DLTS) is shown, along with the activation of Co, its recovery kinetics in p-type Si and the low limit of detection of the SPV technique.All rights reserved. No part of contents of this paper may be reproduced or transmitted in any form or by any means without the written permission of Trans Tech Publications Ltd, www.scientific.net.
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