Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx

Pic, Nicolas; Glachant, A.; Nitsche, S.; Hoarau, Jean-Yves; Goguenheim, D.; Vuillaume, D.; Sibaï, A.; Chaneliere, C.

doi:10.1016/s0038-1101(01)00174-5

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Imfp In Si 3 N1

Characterization Of the Clean Surface1

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2003

2010

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Cited by 5 publications

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“…First there is no band gap. This observation is in contradiction with the finding of Pic et al [27], but agrees with the similar observation of Holgado et al [28] for SiO x samples. It should be also added that, allowing some slight contamination after ion bombardment, the band gap appeared again in the spectrum [29].…”

Section: Imfp In Si 3 Nsupporting

confidence: 57%

Determination of effective electron inelastic mean free paths in SiO2 and Si3N4 using a Si reference

et al. 2003

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